M48Z35-70MH1E STMICROELECTRONICS [STMicroelectronics], M48Z35-70MH1E Datasheet
M48Z35-70MH1E
Related parts for M48Z35-70MH1E
M48Z35-70MH1E Summary of contents
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... Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages Power-fail Deselect Voltage) PFD – M48Z35 4.75 to 5.5V CC 4.5V V 4.75V PFD – M48Z35Y: 4.5 to 5.5V 4.2v V 4.5v pfd ■ Self-contained battery in the CAPHAT™ DIP package ■ Packaging includes a 28-lead SOIC and ® SNAPHAT top (to be ordered separately) ■ ...
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Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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... The M48Z35 non-volatile pin and function equivalent to any JEDEC standard 32K x 8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed. The 28-pin 600mil DIP CAPHAT™ ...
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... DQ4 DQ3 AI01617D A14 A12 A13 A11 M48Z35Y A10 DQ7 DQ0 11 18 DQ6 DQ1 12 17 DQ5 DQ2 13 16 DQ4 DQ3 AI02303C ...
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Figure 4. Block diagram LITHIUM CELL VOLTAGE SENSE SWITCHING POWER AND V PFD CIRCUITRY V CC A0-A14 DQ0-DQ7 32K x 8 SRAM ARRAY AI01619B 7/23 ...
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... SO 2.1 Read mode The M48Z35 the READ Mode whenever W (WRITE Enable) is high, E (Chip Enable) is low. The device architecture allows ripple-through access of data from eight of 264,144 locations in the static storage array. Thus, the unique address specified by the 15 Address Inputs defines which one of the 32,768 bytes of data accessed. Valid data will be available at the Data I/O pins within Address Access time (t signal is stable, providing that the E and G access times are also satisfied ...
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... Valid for ambient operating temperature 100pF 5pF. L tAVAV VALID tAVQV tELQV tELQX tGLQV tGLQX (1) Parameter = 0 to 70° 4.75 to 5.5V or 4.5 to 5.5V (except where noted tAXQX tEHQZ tGHQZ VALID AI00925 M48Z35/Y –70 Unit Min Max 9/23 ...
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... Write mode The M48Z35 the WRITE Mode whenever W and E are low. The start of a WRITE is referenced from the latter occurring falling edge WRITE is terminated by the earlier rising edge The addresses must be held valid throughout the cycle must return high for a minimum of t prior to the initiation of another READ or WRITE cycle ...
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... V of the power supply lines is recommended. When V drops below V CC preserves data. The internal button cell will maintain data in the M48Z35/Y for an accumulated period of at least 10 years (at 25°C) when V As system power returns and V power supply is switched to external V V ...
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... A CC may result in deselection/write protection not occurring until 200µs after F may cause corruption of RAM data. FB (1) Min M48Z35 4.5 M48Z35Y 4.2 M48Z35 70° 4.75 to 5.5V or 4.5 to 5.5V (except where noted tRB trec RECOGNIZED VALID (PER CONTROL INPUT) ...
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V noise and negative going transients CC I transients, including those produced by output switching, can produce voltage CC fluctuations, resulting in spikes on the V capacitors are used to store energy which stabilizes the V bypass capacitors will ...
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Maximum rating Stressing the device above the rating listed in the “Absolute Maximum Ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above ...
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... At 25°C. conditions. Designers should check that the operating Parameter ) ) 645 DEVICE UNDER TEST 100pF or 5pF C L includes JIG capacitance (1)(2) Parameter Min Table 8: M48Z35 M48Z35Y 4.75 to 5.5V 4 100 100 1.5 1.5 1.75V AI03211 Max Unit ...
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Table 10. DC characteristics Symbol Parameter (2) I Input leakage current LI (2) I Output leakage current LO I Supply current CC I Supply current (standby) TTL CC1 I Supply current (standby) CMOS CC2 V Input low voltage IL V ...
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Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second Level Interconnect is marked on the package and on the inner ...
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Figure 12. SOH28 – 28-lead plastic small outline, battery SNAPHAT, package outline B Note: Drawing is not to scale. Table 12. SOH28 – 28-lead plastic small outline, battery SNAPHAT, pack. mech. data Symbol Typ ...
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Figure 13. SH – 4-pin SNAPHAT housing for 48mAh battery, package outline Note: Drawing is not to scale. Table 13. SH – 4-pin SNAPHAT housing for 48mAh battery, pack. mech. data Symbol Typ ...
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Figure 14. SH – 4-pin SNAPHAT housing for 120mAh battery, package outline Note: Drawing is not to scale. Table 14. SH – 4-pin SNAPHAT housing for 120mAh battery, pack. mech. data Symb Typ ...
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... E = Lead-free Package, Tubes F = Lead-free Package, Tape & Reel For PCDIP28: blank = Tubes 1. The M48Z35 part is offered with the PCDIP28 (CAPHAT) package only. 2. The SOIC package (SOH28) requires the SNAPHAT the part number “M4Zxx-BR00SH1” in plastic tubes (see Caution: Do not place the SNAPHAT battery package “M4Zxx-BR00SH1” in conductive foam as it will drain the lithium button-cell battery ...
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Revision history Table 17. Document revision history Date Revision August 1999 21-Apr-00 10-May-01 29-May-02 02-Apr-03 03-Mar-04 20-Aug-04 09-Jun-05 02-Nov-2007 22/23 1.0 First Issue 1.1 SH and SH28 packages for 2-pin and 2-socket removed 2.0 Reformatted; added temperature information 2.1 ...
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Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any ...