TC55VBM316AFTN TOSHIBA [Toshiba Semiconductor], TC55VBM316AFTN Datasheet
TC55VBM316AFTN
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TC55VBM316AFTN Summary of contents
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... This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the TC55VBM316AFTN/ASTN can be used in environments exhibiting extreme temperature conditions. The TC55VBM316AFTN/ASTN is available in a plastic 48-pin thin-small-outline package (TSOP) ...
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... A18 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 I/O16 CE 1 CE2 LB UB R/W OE BYTE TC55VBM316AFTN/ASTN40,55 MEMORY CELL ARRAY 4,096 × 128 × 16 (8,388,608) SENSE AMP COLUMN ADDRESS DECODER COLUMN ADDRESS REGISTER COLUMN ADDRESS BUFFER CLOCK GENERATOR A GND CE A5 A16 ...
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... V when measured at a pulse width of 20ns DC RECOMMENDED OPERATING CONDITIONS ( SYMBOL V Power Supply Voltage DD V Input High Voltage IH V Input Low Voltage IL V Data Retention Supply Voltage DH *: −2.0 V when measured at a pulse width of 20ns TC55VBM316AFTN/ASTN40,55 R/W BYTE LB UB I/O1~I/ Output * * Output ...
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... CE2 = 0.2 V (at BYTE ≥ DDS2 ( 25° MHz) CAPACITANCE SYMBOL PARAMETER C Input Capacitance IN C Output Capacitance OUT Note: This parameter is periodically sampled and is not 100% tested. TC55VBM316AFTN/ASTN40, 2 TEST CONDITION = 0 V − CE2 = ...
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... TC55VBM316AFTN/ASTN UNIT 40 55 MIN MAX MIN MAX ...
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... TC55VBM316AFTN/ASTN UNIT 40 55 MIN MAX MIN MAX ...
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... DD 90% 10% GND 1 V/ BYTE FUNCTION SYMBOL t BYTE Setup Time BS t BYTE Recovery Time BR TIMING DIAGRAMS BYTE CE2 CE 1 BYTE TC55VBM316AFTN/ASTN40,55 Fig.2 : Output load 90% 10 PARAMETER TEST CONDITION × 0 0 ns(Fig.1) × 0 × 0 TTL Gate(Fig.2) ...
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... OUT I/O1~16 (Word Mode) Hi-Z I/O1~8 (Byte Mode) WRITE CYCLE 1 (R/W CONTROLLED) Address A0~A18 (Word Mode) A-1~A18 (Byte Mode) R CE2 OUT I/O1~16 (Word Mode) I/O1~8 (Byte Mode I/O1~16 (Word Mode) I/O1~8 (Byte Mode) TC55VBM316AFTN/ASTN40, ACC t CO1 t CO2 OEE t COE (See Note ...
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... IN I/O1~16 (Word Mode) I/O1~8 (Byte Mode) WRITE CYCLE 3 (CE2 CONTROLLED) Address A0~A18 (Word Mode) A-1~A18 (Byte Mode) R CE2 OUT I/O1~16 (Word Mode) I/O1~8 (Byte Mode I/O1~16 (Word Mode) I/O1~8 (Byte Mode) TC55VBM316AFTN/ASTN40,55 (See Note ODW Hi-Z t COE ...
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... If CE1 ( goes HIGH(or CE2 goes LOW) coincident with or before R/W goes HIGH, the outputs will remain at high impedance. ( HIGH during the write cycle, the outputs will remain at high impedance. (5) Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be applied. TC55VBM316AFTN/ASTN40,55 (See Note 4) CONTROLLED ...
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... GND CONTROLLED DATA RETENTION MODE 2 GND TC55VBM316AFTN/ASTN40, − − − − 40° to 85°C PARAMETER = 3 −40~85° −40~40° −40~85°C (See Note 1) DATA RETENTION MODE (See Note 2) t CDR − 0.2 V ...
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... V or CE1 ≥ V − 0.2 V, CE2 ≤ 0 CE2 ≥ (5) When UB ( operating at the V the transition of V from 2.3(2.7) to 2.2V(2.4 V). DD TC55VBM316AFTN/ASTN40,55 (min.) level, the operating current is given − 0 (min.) level, the operating current is given during the DDS1 ...
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... PACKAGE DIMENSIONS TSOPⅠ48-P-1220-0. Weight:0.51 g (typ) TC55VBM316AFTN/ASTN40,55 18.4 0.1 20.0 0.2 Unit: 1.0 0.1 0.1 0.05 1.2max 0.5 0.1 2002-08-05 13/15 ...
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... PACKAGE DIMENSIONS TSOPⅠ48-P-1214-0. Weight:0.36 g (typ) TC55VBM316AFTN/ASTN40, 12.4 0.1 14.0 0.2 Unit:mm 1.0 0.1 0.1 0.05 1.2max 0.5 0.1 2002-08-05 14/15 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. TC55VBM316AFTN/ASTN40,55 2002-08-05 15/15 000707EBA ...