TC55VBM316AFTN TOSHIBA [Toshiba Semiconductor], TC55VBM316AFTN Datasheet - Page 7

• Manufacturer Part Number: TC55VBM316AFTN
• Description: TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

BYTE
AC TEST CONDITIONS
Fig.1 : Input rise and fall time
TIMING DIAGRAMS
V
DD
Input pulse level
t
Timing measurements
Reference level
Output load
t
t
BYTE
R
BS
BR
GND
, t
SYMBOL
Typ
F
FUNCTION
1 V/ns
BYTE
CE2
CE
10%
1
BYTE Setup Time
BYTE Recovery Time
t
R
90%
PARAMETER
PARAMETER
t
BS
t
F
90%
10%
1 V/ns
TC55VBM316AFTN/ASTN40,55
Fig.2 : Output load
t
BR
0.2 V, V
30 pF + 1 TTL Gate(Fig.2)
Dout
30 pF
TEST CONDITION
1V / ns(Fig.1)
DD
V
V
MIN
5
5
DD
DD
× 0.7 V + 0.2 V
V
× 0.5
× 0.5
TM
R1
R2
2002-08-05 7/15
MAX


R1 = 810 Ω
R2 = 1610 Ω
V
TM
= 2.3 V
UNIT
ms
ms