MC9S08QE128 FREESCALE [Freescale Semiconductor, Inc], MC9S08QE128 Datasheet - Page 33

• Manufacturer Part Number: MC9S08QE128
• Description: 8-Bit HCS08 Central Processor Unit
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

3.10.6
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see the Memory section of the MC9S08QE128 Reference Manual.
3.11
Electromagnetic compatibility (EMC) performance is highly dependent on the environment in which the MCU resides. Board
design and layout, circuit topology choices, location and characteristics of external components as well as MCU software
operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such
as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC
performance.
Freescale Semiconductor
1
2
3
4
5
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
The program and erase currents are additional to the standard run I
with V
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on
how Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
C
D
D
D
D
P
P
P
P
C
C
DD
Supply voltage for program/erase
-40°C to 85°C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
Page erase current
Program/erase endurance
Data retention
EMC Performance
T
T = 25°C
Flash Specifications
= 3.0 V, bus frequency = 4.0 MHz.
L
to T
H
= –40°C to + 85°C
5
Characteristic
2
(2)
MC9S08QE128 Series Advance Information Data Sheet, Rev. 3
3
3
1
4
(2)
Table 18. Flash Characteristics
(2)
V
Symbol
prog/erase
R
R
V
f
t
t
t
t
t
FCLK
t
Mass
IDDBP
IDDPE
D_ret
Burst
Page
Fcyc
Read
prog
DD
10,000
. These values are measured at room temperatures
Min
150
1.8
1.8
—
—
—
15
5
100,000
Typical
20,000
4000
100
—
9
4
4
6
DD
supply. For more detailed
Electrical Characteristics
Max
6.67
200
3.6
3.6
—
—
—
—
—
cycles
years
t
t
t
t
Unit
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
33