2SK3473_06 TOSHIBA [Toshiba Semiconductor], 2SK3473_06 Datasheet

2SK3473_06

Manufacturer Part Number

2SK3473_06

Description

Silicon N Channel MOS Type Switching Regulator Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK3473_06.pdf (6 pages)

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Switching Regulator Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)

= 90 V, T

Pulse (t = 1 ms)

= 20 kΩ)

DSS

= 25°C(initial), L = 9.35 mH, I

= 2.0~4.0 V (V

(Note 1)

(Note 2)

= 100 μA (V

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

| = 6.5S (typ.)

stg

2SK3473

Symbol

th (ch-a)

th (ch-c)

= 10 V, I

= 1.3Ω (typ.)

= 720 V)

-55~150

Rating

900

±30

150

413

150

= 1 mA)

0.833

Max

= 9 A, R

Unit

°C

°C/W

Unit

= 25 Ω

Weight: 4.6 g (typ.)

JEDEC

JEITA

TOSHIBA

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

2-16C1B

SC-65

2006-11-10

―

2SK3473

Unit: mm

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2SK3473_06 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) Switching Regulator Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (V DSS • Enhancement mode ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off ...

Page 3

I – COMMON SOURCE 25°C PULSE TEST DRAIN-SOURCE VOLTAGE – COMMON ...

Page 4

R – (ON) 5 COMMON SOURCE PULSE TEST 4 −80 − CASE TEMPERATURE Tc (°C) CAPACITANCE – 10000 1000 100 COMMON SOURCE V ...

Page 5

Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.05 0.02 0.03 0.01 0.01 0.005 0.003 0.001 10 μ 100 μ Safe operating area 100 50 100 μ max (pulsed ...

Page 6

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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