2SK3473_06 TOSHIBA [Toshiba Semiconductor], 2SK3473_06 Datasheet - Page 2

• Manufacturer Part Number: 2SK3473_06
• Description: Silicon N Channel MOS Type Switching Regulator Applications
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
Gate-source charge
Gate-drain charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
TOSHIBA
K3473
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Note 1)
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
⎪
I
I
DRP
Q
DSF
DR
t
rr
rr
V
I
V
I
V
V
V
V
V
D
D
Duty < = 1%, t
GS
DS
DS
GS
DS
DS
DD
V
= ±10 μA, V
= 10 mA, V
GS
I
I
dI
DR
DR
= 720 V, V
= 10 V, I
= 15 V, I
= 25 V, V
10 V
= ±25 V, V
= 10 V, I
∼ − 400 V, V
DR
0 V
2
= 9 A, V
= 9 A, V
(Ta = 25°C)
/dt = 100 A/μs
4.7 Ω
Test Condition
D
D
D
w
GS
GS
GS
Test Condition
GS
= 1 mA
= 4 A
DS
= 4 A
GS
= 10 μs
GS
GS
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 0 V
= 10 V, I
= 0 V
I
= 0 V,
D
⎯
⎯
= 4 A
V
DD
D
= 9 A
R
∼ − 400 V
V
L
OUT
100 Ω
=
900
Min
±30
Min
2.0
3.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1450
1350
Typ.
Typ.
155
1.3
6.5
30
30
55
12
75
38
22
16
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2006-11-10
2SK3473
−1.7
Max
Max
±10
100
4.0
1.6
⎯
⎯
⎯
⎯
⎯
27
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
9
Unit
Unit
nC
μC
μA
μA
pF
ns
ns
Ω
V
V
V
S
A
A
V