2SK3475_07 TOSHIBA [Toshiba Semiconductor], 2SK3475_07 Datasheet

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2SK3475_07

Manufacturer Part Number
2SK3475_07
Description
Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK3475_07.pdf (4 pages)
VHF- and UHF-band Amplifier Applications
•
•
•
Maximum Ratings
Marking
Caution: This device is sensitive to electrostatic discharge.
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These
TOSHIBA products are neither intended nor warranted for any other
use.Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
Output power: P
Gain: G
Drain efficiency: η
Drain-source voltage
Gain-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Lot No.
P
Please make enough tool and equipment earthed when you handle.
= 14.9dB (min)
Characteristics
O
1. Gate
2. Source
3. Drain
D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
= 630 mW (min)
1
W
= 45% (min)
(Ta = 25°C)
2
B
3
Part No. (or abbreviation code)
P
D
Symbol
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
V
V
(Note 1)
T
T
GSS
DSS
I
stg
D
ch
2SK3475
−45~150
Rating
150
20
10
1
3
1
Unit
°C
°C
W
V
V
A
JEDEC
JEITA
TOSHIBA
2-5K1D
SC-62
―
2SK3475
2007-2-19
Unit: mm

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2SK3475_07 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any ...

Page 2

Electrical Characteristics Characteristics Drain cut-off current Gate-source leakage current Threshold voltage Drain-source on-voltage Forward transconductance Input capacitance Output capacitance Output power Drain efficiency Power gain Low voltage output power Note 2: These characteristic values are measured using measurement tools specified ...

Page 3

P – 2 520 MHz I idle = 25°C 2.0 9.6 V 1.5 7 6 Input power P (mW) ...

Page 4

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any ...

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