2SK3475_07 TOSHIBA [Toshiba Semiconductor], 2SK3475_07 Datasheet
2SK3475_07
Related parts for 2SK3475_07
2SK3475_07 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any ...
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Electrical Characteristics Characteristics Drain cut-off current Gate-source leakage current Threshold voltage Drain-source on-voltage Forward transconductance Input capacitance Output capacitance Output power Drain efficiency Power gain Low voltage output power Note 2: These characteristic values are measured using measurement tools specified ...
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P – 2 520 MHz I idle = 25°C 2.0 9.6 V 1.5 7 6 Input power P (mW) ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any ...