SSM6P05FU_07 TOSHIBA [Toshiba Semiconductor], SSM6P05FU_07 Datasheet

SSM6P05FU_07

Manufacturer Part Number

SSM6P05FU_07

Description

Power Management Switch

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.SSM6P05FU_07.pdf (5 pages)

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Power Management Switch

High Speed Switching Applications

•

Absolute Maximum Ratings

(Q1, Q2 Common)

Handling Precaution

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

Small package

Low on resistance : R

Low gate threshold voltage

Drain-Source voltage

Gate-Source voltage

Drain current

Drain power dissipation (Ta = 25°C)

Channel temperature

Storage temperature range

Note:

Note 1: Total rating, mounted on FR4 board

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm

Characteristics

: R

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

Pulse

= 3.3 Ω (max) (@V

= 4.0 Ω (max) (@V

SSM6P05FU

(Ta = 25°C)

Symbol

(Note 1)

GSS

stg

= −4 V)

= −2.5 V)

−55~150

Rating

−200

−400

−20

±12

300

150

× 6)

Unit

°C

Weight: 6.8 mg (typ.)

JEDEC

JEITA

TOSHIBA

SSM6P05FU

2-2J1C

2007-11-01

―

Unit: mm

Related parts for SSM6P05FU_07

SSM6P05FU_07 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications • Small package • Low on resistance : R = 3.3 Ω (max) (@ 4.0 Ω (max) (@V on • ...

Marking Electrical Characteristics Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching ...

Page 3

Q2 common) I – −500 −400 −10 −4 −3 −300 −200 −100 0 −0.5 −1.0 0 Drain-Source voltage V DS (V) R – (ON Common Source Ta = 25°C 5 −2.5 V ...

Page 4

Q2 common) I – −500 Common Source 25°C −400 D −300 −200 −100 0 0 0.2 0.4 0.6 0.8 Drain-Source voltage V DS (V) t – ...

Page 5

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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SSM6P05FU_07 datasheet download

SSM6P05FU_07 TOSHIBA [Toshiba Semiconductor], SSM6P05FU_07 Datasheet

SSM6P05FU_07

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SSM6P05FU_07 Summary of contents

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