SSM6P05FU_07 TOSHIBA [Toshiba Semiconductor], SSM6P05FU_07 Datasheet - Page 2

• Manufacturer Part Number: SSM6P05FU_07
• Description: Power Management Switch
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Marking
Electrical Characteristics
Switching Time Test Circuit
Precaution
this product. For normal switching operation, V
lower voltage than V
V
Please take this into consideration for using the device.
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note2: Pulse test
(a) Test circuit
th
can be expressed as voltage between gate and source when low operating current value is I
6
1
−2.5 V
D H
0
Characteristics
5
2
V
Duty < = 1%
V
(Z
Common Source
Ta = 25°C
DD
IN
out
10 μs
: t
= −3 V
th
r
= 50 Ω)
, t
. (Relationship can be established as follows: V
f
Turn-on time
Turn-off time
4
3
< 5 ns
IN
(Ta = 25°C) (Q1, Q2 common)
(Q1, Q2 common)
V
R
V
R
Symbol
OUT
(BR) DSS
DD
L
DS (ON)
⎪Y
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
iss
rss
Equivalent Circuit
th
fs
GS (on)
⎪
V
I
V
V
V
I
I
V
V
V
6
1
D
D
D
requires higher voltage than V
GS
DS
DS
DS
DS
DD
GS
(b) V
(c) V
= −1 mA, V
= −100 mA, V
= −50 mA, V
Q1
2
= ±12 V, V
= −20 V, V
= −3 V, I
= −3 V, I
= −3 V, V
= −3 V, I
= 0~−2.5 V
OUT
IN
Test Condition
5
2
D
D
D
GS
GS
GS
= −0.1 mA
= −50 mA
DS
GS
= −50 mA,
GS
Q2
= 0
= 0, f = 1 MHz
GS (off)
= −2.5 V (Note2)
= 0
= 0
V
= −4 V (Note2)
(top view)
DS (ON)
4
3
−2.5 V
V
0 V
DD
< V
(Note2)
th
< V
th
GS (on)
−0.6
t
Min
−20
100
⎯
⎯
10%
on
⎯
⎯
⎯
⎯
⎯
⎯
⎯
and V
t
r
90%
10%
)
GS (off)
Typ.
2.1
3.2
27
21
70
70
⎯
⎯
⎯
⎯
⎯
7
SSM6P05FU
D
= −100 μA for
t
90%
off
2007-11-01
requires
−1.1
Max
t
3.3
4.0
±1
−1
⎯
⎯
⎯
f
⎯
⎯
⎯
⎯
Unit
mS
μA
μA
pF
pF
pF
ns
Ω
V
V