GAL16LV8C-10LJ Lattice Semiconductor, GAL16LV8C-10LJ Datasheet

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GAL16LV8C-10LJ

Manufacturer Part Number
GAL16LV8C-10LJ
Description
Low Voltage E2CMOS PLD Generic Array Logic
Manufacturer
Lattice Semiconductor
Datasheet

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• HIGH PERFORMANCE E
• 3.3V LOW VOLTAGE 16V8 ARCHITECTURE
• ACTIVE PULL-UPS ON ALL PINS (GAL16LV8D Only)
• E
• EIGHT OUTPUT LOGIC MACROCELLS
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS
• APPLICATIONS INCLUDE:
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
The GAL16LV8D, at 3.5 ns maximum propagation delay time,
provides the highest speed performance available in the PLD
market. The GAL16LV8C can interface with both 3.3V and 5V
signal levels. The GAL16LV8 is manufactured using Lattice
Semiconductor's advanced 3.3V E
bines CMOS with Electrically Erasable (E
High speed erase times (<100ms) allow the devices to be repro-
grammed quickly and efficiently.
The 3.3V GAL16LV8 uses the same industry standard 16V8 archi-
tecture as its 5V counterpart and supports all architectural features
such as combinatorial or registered macrocell operations.
Unique test circuitry and reprogrammable cells allow complete AC,
DC, and functional testing during manufacture. As a result, Lattice
Semiconductor delivers 100% field programmability and function-
ality of all GAL products. In addition, 100 erase/write cycles and
data retention in excess of 20 years are specified.
Copyright © 1997 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject
to change without notice.
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.
Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com
16lv8_04
Features
Description
— 3.5 ns Maximum Propagation Delay
— Fmax = 250 MHz
— 2.5 ns Maximum from Clock Input to Data Output
— UltraMOS
— JEDEC-Compatible 3.3V Interface Standard
— 5V Compatible Inputs
— I/O Interfaces with Standard 5V TTL Devices
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
— Maximum Flexibility for Complex Logic Designs
— Programmable Output Polarity
— 100% Functional Testability
— Glue Logic for 3.3V Systems
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic Speed Upgrade
2
CELL TECHNOLOGY
(GAL16LV8C)
®
Advanced CMOS Technology
2
CMOS
2
®
CMOS process, which com-
TECHNOLOGY
2
) floating gate technology.
1
Functional Block Diagram
Pin Configuration
I/CLK
I
I
I
I
I
I
I
I
I
I
I
I
I
4
6
8
I
9
I
GND
GAL16LV8
2
I
Low Voltage E
Top View
I/CLK
PLCC
I/OE
11
Generic Array Logic™
GAL16LV8
I/O/Q
Vcc
20
8
8
8
8
8
8
8
8
CLK
I/O/Q
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
I/O/Q
13
18
14
16
December 1997
2
CMOS PLD
OE
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/OE

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