BS62LV1029DC Brilliance Semiconductor, BS62LV1029DC Datasheet

no-image

BS62LV1029DC

Manufacturer Part Number
BS62LV1029DC
Description
Very Low Power/Voltage CMOS SRAM 128K X 8 bit
Manufacturer
Brilliance Semiconductor
Datasheet
R0201-BS62LV1029
• Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
• High speed access time :
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2, CE1, and OE options
PRODUCT FAMILY
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc
BS62LV1029SC
BS62LV1029TC
BS62LV1029STC
BS62LV1029PC
BS62LV1029JC
BS62LV1029DC
BS62LV1029SI
BS62LV1029TI
BS62LV1029STI
BS62LV1029PI
BS62LV1029JI
BS62LV1029DI
FEATURES
Vcc = 5.0V
-55
-70
PRODUCT
FAMILY
BSI
VCC
CE2
A11
A13
A15
A16
A14
A12
WE
NC
A9
A8
A7
A6
A5
A4
55ns
70ns
GND
DQ0
DQ1
DQ2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A16
A14
A12
NC
A7
A6
A5
A4
A3
A2
A1
A0
C-grade : 46mA (@55ns) operating current
C-grade : 38mA (@70ns) operating current
0.6uA (Typ.) CMOS standby current
I- grade : 47mA (@55ns) operating current
I- grade : 39mA (@70ns) operating current
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
-40
TEMPERATURE
+0
BS62LV1029TC
BS62LV1029STC
BS62LV1029TI
BS62LV1029STI
BS62LV1029SC
BS62LV1029SI
BS62LV1029PC
BS62LV1029PI
BS62LV1029JC
BS62LV1029JI
OPERATING
O
O
C to +70
C to +85
Very Low Power/Voltage CMOS SRAM
128K X 8 bit
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
O
O
C
C
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
. reserves the right to modify document contents without notice.
4.5V ~ 5.5V
4.5V~ 5.5V
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
RANGE
Vcc
55ns :4.5~5.5V
70ns :4.5~5.5V
SPEED
55/70
55/70
(ns)
The BS62LV1029 is a high performance, very low power CMOS
Static Random Access Memory organized as 131,072 words by 8 bits
and operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.6uA at 5V/25
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62LV1029 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV1029 is available in DICE form , JEDEC standard 32 pin
mm STSOP and 8mmx20mm TSOP.
450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4
1
DESCRIPTION
BLOCK DIAGRAM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE2
A12
A14
A16
A15
A13
A11
CE1
Vdd
Gnd
WE
OE
A6
A7
A8
A9
STANDBY
(I
Vcc=5.0V
CCSB1
Address
Buffer
o
Input
8.0uA
C and maximum access time of 55ns at 5V/85
20uA
POWER DISSIPATION
8
Control
8
, Max)
20
Output
Data
Buffer
Data
Buffer
Input
Decoder
47mA
46mA
Row
55ns
Operating
Vcc= 5.0V
(I
CC
, Max)
8
1024
8
38mA
39mA
BS62LV1029
70ns
A5
Address Input Buffer
A4
Column Decoder
Memory Array
Write Driver
Sense Amp
1024 x 1024
Column I/O
A3 A2 A1 A0 A10
SOP-32
TSOP-32
STSOP-32
PDIP-32
SOJ-32
DICE
SOP-32
TSOP-32
STSOP-32
PDIP-32
SOJ-32
DICE
PKG TYPE
1024
128
14
Revision 1.1
Jan.
o
C.
2004

Related parts for BS62LV1029DC

BS62LV1029DC Summary of contents

Page 1

... Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE2, CE1, and OE options PRODUCT FAMILY PRODUCT OPERATING FAMILY TEMPERATURE BS62LV1029SC BS62LV1029TC BS62LV1029STC +70 BS62LV1029PC BS62LV1029JC BS62LV1029DC BS62LV1029SI BS62LV1029TI BS62LV1029STI O - +85 BS62LV1029PI BS62LV1029JI BS62LV1029DI PIN CONFIGURATIONS A16 2 ...

Page 2

BSI PIN DESCRIPTIONS Name A0-A16 Address Input CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports Vcc Gnd TRUTH TABLE MODE WE X Not selected (Power Down) ...

Page 3

BSI DC ELECTRICAL CHARACTERISTICS PARAMETER PARAMETER NAME Guaranteed Input Low V IL (2) Voltage Guaranteed Input High V IH (2) Voltage I Input Leakage Current IL I Output Leakage Current LO V Output Low Voltage OL V Output High Voltage ...

Page 4

BSI AC TEST CONDITIONS (Test Load and Input/Output Reference) Input Pulse Levels Vcc / 0V Input Rise and Fall Times 1V/ns Input and Output 0.5Vcc Timing Reference Level Output Load ELECTRICAL CHARACTERISTICS READ CYCLE JEDEC PARAMETER PARAMETER ...

Page 5

BSI SWITCHING WAVEFORMS (READ CYCLE) (1,2,4) READ CYCLE1 ADDRESS D OUT (1,3,4) READ CYCLE2 CE1 CE2 D OUT (1,4) READ CYCLE3 ADDRESS OE CE1 CE2 D OUT NOTES high in read Cycle. 2. Device is continuously selected ...

Page 6

BSI AC ELECTRICAL CHARACTERISTICS WRITE CYCLE JEDEC PARAMETER PARAMETER NAME NAME t t AVAX E1LWH AVWL AVWH WLWH WHAX WR1 t t E2LAX WR2 t ...

Page 7

BSI (1,6) WRITE CYCLE2 ADDRESS CE1 CE2 WE D OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and ...

Page 8

... Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support systems and critical medical instruments ...

Page 9

BSI PACKAGE DIMENSIONS (continued) STSOP - 32 TSOP - 32 R0201-BS62LV1029 BS62LV1029 9 Revision 1.1 Jan. 2004 ...

Page 10

BSI PACKAGE DIMENSIONS (continued) PDIP - 32 SOJ - 32 R0201-BS62LV1029 10 BS62LV1029 Revision 1.1 Jan. 2004 ...

Related keywords