K4S641632C Samsung semiconductor, K4S641632C Datasheet - Page 34

• Manufacturer Part Number: K4S641632C
• Description: 1M x 16Bit x 4 Banks Synchronous DRAM
• Manufacturer: Samsung semiconductor

DQ
CLOCK
K4S641632C
Read & Write Cycle with Auto Precharge II @Burst Length=4
A
ADDR
DQM
10
CKE
RAS
CAS
BA
BA
WE
/AP
CS
CL=2
CL=3
0
1
*Note :
0
Row Active
(A-Bank)
ELECTRONICS
Ra
Ra
1
*¨ç Any command to A-bank is not allowed in this period.
tRP is determined from at auto precharge start point
2
3
4
Auto Precharge
Read with
(A-Bank)
Ca
5
6
Qa0
7
*¨ç
Qa1
Qa0
Auto Precharge
8
Row Active
Start Point
(A-Bank)
(B-Bank)
Qa2
Rb
Rb
Qa1
9
HIGH
Qa3
Qa2
10
Auto Precharge
Qa3
Cb
Read with
(B-Bank)
11
12
Qb0
13
Qb1
Auto Precharge
Qb0
14
Start Point
(B-Bank)
Qb2
Qb1
15
Qb3
Qb2
16
CMOS SDRAM
Qb3
17
18
: Don't care
19