K4S161622H-TC55 Samsung semiconductor, K4S161622H-TC55 Datasheet - Page 3

• Manufacturer Part Number: K4S161622H-TC55
• Description: 16Mb H-die SDRAM Specification
• Manufacturer: Samsung semiconductor

GENERAL DESCRIPTION
SDRAM 16Mb H-die(x16)
with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/
O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable laten-
cies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
ORDERING INFORMATION
512K x 16Bit x 2 Banks SDRAM
FEATURES
• 3.3V power supply
• LVTTL compatible with multiplexed address
• two banks operation
• MRS cycle with address key programs
• All inputs are sampled at the positive going edge of the system clock
• Burst Read Single-bit Write operation
• DQM for masking
• Auto & self refresh
• 32ms refresh period (2K cycle)
The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated
K4S161622H-TC55
K4S161622H-TC60
K4S161622H-TC70
K4S161622H-TC80
-. CAS Latency ( 2 & 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
Part NO.
Organization
1Mx16
Row & Column address configuration
Row Address
MAX Freq.
A0~A10
183MHz
166MHz
143MHz
125MHz
Column Address
A0-A7
Interface
LVTTL
Rev. 1.5 August 2004
CMOS SDRAM
Package
TSOP(II)
50pin