K4S560432E-TC Samsung semiconductor, K4S560432E-TC Datasheet - Page 11

• Manufacturer Part Number: K4S560432E-TC
• Description: 256Mb E-die SDRAM Specification
• Manufacturer: Samsung semiconductor

SDRAM 256Mb E-die (x4, x8, x16)
SDRAM 256Mb E-die (x4, x8, x16)
AC CHARACTERISTICS
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Notes :
Notes :
CLK cycle time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in Hi-Z
Output rise time
Output fall time
Output rise time
Output fall time
Parameter
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
1. Rise time specification based on 0pF + 50 Ω to V
2. Fall time specification based on 0pF + 50 Ω to V
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
Symbol
trh
tfh
trh
tfh
(AC operating conditions unless otherwise noted)
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Condition
SS
.
DD
Symbol
SS
t
t
t
, use these values to design to.
t
t
SAC
t
t
t
t
SHZ
, use these values to design to.
SLZ
CC
OH
CH
SH
CL
SS
1.37
1.30
Min
2.8
2.0
Min
2.5
2.5
2.5
1.5
6
1
1
-
-
-60
1000
Max
Typ
3.9
2.9
5
5
-
-
Rev. 1.3 September. 2003
Min
7.5
2.5
2.5
1.5
0.8
10
3
3
1
Max
4.37
3.8
5.6
5.0
-75
1000
Max
CMOS SDRAM
5.4
5.4
6
6
Volts/ns
Volts/ns
Volts/ns
Volts/ns
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
Note
1,2
1,2
1,2
3
3
1
2
3
3
3
3
2