K4S56163LC Samsung semiconductor, K4S56163LC Datasheet
K4S56163LC
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K4S56163LC Summary of contents
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... K4S56163LC-R(B)F/R (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) 16Mx16 Mobile SDRAM 54CSP Revision 1.4 December 2002 CMOS SDRAM Rev. 1.4 Dec. 2002 ...
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... CKE * Samsung Electronics reserves the right to change products or specification without notice. GENERAL DESCRIPTION The K4S56163LC is 268,435,456 bits synchronous high data rate Dynamic RAM organized 4,196,304 words by 16 bits, fabri- cated with SAMSUNG's high performance CMOS technology. Syn- chronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle ...
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... K4S56163LC-R(B)F/R Package Dimension and Pin Configuration < Bottom View *2: Top View Max. 0.20 Encapsulant *1: Bottom View < Top View #A1 Ball Origin Indicator *1 > E > CMOS SDRAM *2 < Top View > 54Ball(6x9) CSP ...
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... K4S56163LC-R(B)F/R ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Notes : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...
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... Operating Current I CC4 (Burst Mode) Refresh Current I CC5 Self Refresh Current I CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S56163LC-R(B)F** 4. K4S56163LC-R(B)R** 5. Unless otherwise noted, input swing IeveI is CMOS Test Condition Burst length = (min ...
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... K4S56163LC-R(B)F/R AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Output 500 (Fig Output Load Circuit OPERATING AC PARAMETER Parameter Row active to row active delay ...
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... K4S56163LC-R(B)F/R AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter CAS latency=3 CLK cycle time CAS latency=2 CAS latency=1 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=1 CAS latency=3 Output data hold time CAS latency=2 CAS latency=1 CLK high pulse width ...
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... K4S56163LC-R(B)F/R SIMPLIFIED TRUTH TABLE COMMAND Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Bank Active & Row Addr. Read & Auto Precharge Disable Column Address Auto Precharge Enable Write & Auto Precharge Disable Column Address Auto Precharge Enable Burst Stop ...