HYS64-72V2200GU-8 Siemens, HYS64-72V2200GU-8 Datasheet
HYS64-72V2200GU-8
Related parts for HYS64-72V2200GU-8
HYS64-72V2200GU-8 Summary of contents
Page 1
... Utilizes SDRAMs in TSOPII-44 packages • 4096 refresh cycles every 64 ms • 133, 31. 4,00 mm card size with gold contact pads • Semiconductor Group -8 -8-3 100 100 tRCD tRP PROM 1 1 HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 -10 Units 66 MHz 8 ns 6.98 ...
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... The HYS64(72)2200 and HYS64(72)4220 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organised 64 bank and and two banks high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 speed sort SDRAM devices in TSOP44 packages to meet the PC100 requirement ...
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... A10 VCC 82 41 VCC 83 42 CLK0 84 Note : Pinnames in brackets are for the x72 ECC versions Semiconductor Group HYS64(72)V2200/4220GU-8/-10 Symbol PIN # Symbol VSS 85 VSS DU 86 DQ32 CS2 87 DQ33 DQMB2 88 DQ34 DQMB3 89 DQ35 DU 90 VCC VCC 91 ...
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... CS2 DQMB2 DQM DQ0-DQ7 DQ(23:16) DQM DQMB3 DQ0-DQ7 DQ(31:24) A0-A10,BA VCC VSS RAS CAS CKE0 Note only used in the x72 ECC version Block Diagram for 2M x 64/72 SDRAM DIMM modules (HYS64/72V2200GU) Semiconductor Group HYS64(72)V2200/4220GU-8/- DQMB4 DQ(39:32 DQMB5 DQ(47:40 DQMB6 DQ(55:48) ...
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... D0 - D7,(D16) VDD 10k CKE1 D9 - D15,(D17) Note: D16 & D17 is only used in the x72 ECC version and all resistor values are 10 Ohms except otherwise noted. Block Diagram for 4M x 64/72 SDRAM DIMM modules (HYS64/72V4220GU) Semiconductor Group HYS64(72)V2200/4220GU-8/- DQM DQMB4 ...
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... Input capacitance (A0 to A10, BA, RAS, CAS, WE) Input capacitance (CS0 -CS3 ) Input capacitance ( CLK0 - CLK3 Input capacitance (CKE0, CKE1) Input capacitance (DQMB0 - DQMB7) Input / Output capacitance (DQ0-DQ63,CB0-CB7) Input Capacitance (SCL,SA0-2) Input/Output Capacitance Semiconductor Group HYS64(72)V2200/4220GU-8/- 3.3 V 0.3 V DDQ Symbol I(L) I O(L) V ...
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... Down Mode Active Standby Current in Non- power Down Mode Icc3NS Burst Operating Current Auto (CBR) Refresh Current Self Refresh Current Semiconductor Group HYS64(72)V2200/4220GU-8/- VCC = 3.3V a Test Condition Icc1 Burst length = 4, CL=3 trc>=trc(min.), tck>=tck(min.), Io bank interleave operation Icc2P CKE< ...
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... Refresh Exit) Transition time (rise and fall) Common Parameters RAS to CAS delay Cycle Time Active Command Period Precharge Time Bank to Bank Delay Time CAS to CAS delay time (same bank) Semiconductor Group HYS64(72)V2200/4220GU-8/-10 = 3 Symbol Limit Values -8 PC100 2-2-2 min ...
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... Time Data Out to High Impedance Time DQM Data Out Disable Latency Write Cycle Data input to Precharge (write recovery) Data In to Active/refresh DQM Write Mask Latency Semiconductor Group HYS64(72)V2200/4220GU-8/-10 Limit Values Symbol -8 -8-3 PC100 PC100 2-2-2 3-2-3 min. max. min. max. min. max – ...
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... Self Refresh Exit command is registered. 10.Referenced to the time which the output achieves the open circuit condition, not to output voltage levels. 11.t is equivalent DAL DPL Semiconductor Group HYS64(72)V2200/4220GU-8/-10 = 2.4 V with the timing referenced to the 1.4 V crossover ih and tCH 2.4 V 0.4 V tCL ...
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... Maximum Data Access Time from Clock at CL=1 27 Minimum Row Precharge Time 28 Minimum Row Active to Row Active delay tRRD Semiconductor Group HYS64(72)V2200/4220GU-8/-10 2 PROM - is assembled onto the module. Information about the module 2 PROM device during module production using a serial presence SPD Entry Value 128 256 ...
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... SPD Revision 63 Checksum for bytes 64- Manufacturers information (optional) 125 (FFh if not used) 126 Frequency Specification 127 Details of 100 MHz Support 128+ Unused storage locations Semiconductor Group HYS64(72)V2200/4220GU-8/-10 SDRAM-Modules SPD Entry Value 2Mx64 2Mx72 - MByte ...
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... Max. data access time from Clock for CL=2 25 Minimum Clock Cycle Time Maximum Data Access Time from Clock at CL=1 27 Minimum Row Precharge Time 28 Minimum Row Active to Row Active delay tRRD Semiconductor Group HYS64(72)V2200/4220GU-8/-10 SDRAM-Modules SPD Entry Value 2Mx64 2Mx72 -8-3 -8-3 128 80 256 08 SDRAM ...
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... SPD Revision 63 Checksum for bytes 64- Manufacturers information (optional) 125 (FFh if not used) 126 Frequency Specification 127 Details of 100 MHz Support 128+ Unused storage locations Semiconductor Group HYS64(72)V2200/4220GU-8/-10 SDRAM-Modules SPD Entry Value 2Mx64 2Mx72 -8-3 -8 MByte ...
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... Max. data access time from Clock for CL=2 25 Minimum Clock Cycle Time Maximum Data Access Time from Clock at CL=1 27 Minimum Row Precharge Time 28 Minimum Row Active to Row Active delay tRRD Semiconductor Group HYS64(72)V2200/4220GU-8/-10 SDRAM-Modules SPD Entry Value 2Mx64 2Mx72 -10 -10 128 80 256 08 SDRAM ...
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... SPD Revision 63 Checksum for bytes 64- Manufacturers information (optional) 125 (FFh if not used) 126 Frequency Specification 127 Details 128+ Unused storage locations Semiconductor Group HYS64(72)V2200/4220GU-8/-10 SDRAM-Modules SPD Entry Value 2Mx64 2Mx72 -10 - MByte ...
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... L-DIM-168-29 SDRAM DIMM Module package 66, 6,35 2,0 Detail A 2.26 RADIUS 1.27 + 0.10 Detail D Semiconductor Group HYS64(72)V2200/4220GU-8/-10 133,35 127, 42,18 B 124 125 x) 6,35 2,0 Detail B 17 SDRAM-Modules 84 C 168 D 1,27 1,0 + 0.5 - 0,2 0, Detail ECC modules only 4,0 DM168-29.WMF ...