K6T0808C1D-B Samsung semiconductor, K6T0808C1D-B Datasheet - Page 5

• Manufacturer Part Number: K6T0808C1D-B
• Description: 32Kx8 bit Low Power CMOS Static RAM
• Manufacturer: Samsung semiconductor

DATA RETENTION CHARACTERISTICS
AC CHARACTERISTICS
1. The parameter is tested with 50pF test load.
AC OPERATING CONDITIONS
TEST CONDITIONS
K6T0808C1D Family
Input pulse level : 0.8 to 2.4V
Input rising and falling time : 5ns
Input and output reference voltage : 1.5V
Output load (See right) :C
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Read
Write
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
Item
(Test Load and Test Input/Output Reference)
Parameter List
C
L
L
=50pF+1TTL
=100pF+1TTL
(Vcc=4.5~5.5V, K6T0808C1D-L Family:T
Symbol
V
I
t
t
DR
SDR
RDR
DR
CS Vcc-0.2V
Vcc=3.0V, CS Vcc-0.2V
See data retention waveform
Test Condition
Symbol
t
t
t
t
t
t
t
t
t
t
WHZ
t
t
t
t
t
t
OHZ
t
t
t
OLZ
WC
CW
AW
WP
WR
DW
OW
RC
CO
OE
OH
DH
AA
HZ
AS
LZ
A
=0 to 70 C, K6T0808C1D-P Family:T
1. Including scope and jig capacitance
C
L-Ver
LL-Ver
Min
L
55
10
10
55
45
45
40
25
1)
5
0
0
0
0
0
0
5
-
-
-
55
1)
ns
Max
Speed Bins
55
55
25
20
20
20
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
2.0
0
5
-
-
Min
CMOS SRAM
70
10
10
70
60
60
50
30
Typ
0.2
5
0
0
0
0
0
0
5
-
-
-
1
-
-
-
70ns
Max
Max
November 1997
A
70
70
35
30
30
25
5.5
15
=-40 to 85 C)
-
-
-
-
-
-
-
-
-
-
-
-
-
3
-
-
Revision 1.0
Units
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
A