K9F5608U0A-YIB0 Samsung semiconductor, K9F5608U0A-YIB0 Datasheet - Page 28

• Manufacturer Part Number: K9F5608U0A-YIB0
• Description: 32M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

Data Protection & Powerup sequence
K9F5608U0A-YCB0,K9F5608U0A-YIB0
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
during power-up and power-down and recovery time of minimum 1 s is required before internal circuit gets ready for any command
sequences as shown in Figure 13. The two step command sequence for program/erase provides additional software protection.
Figure 13. AC Waveforms for Power Transition
WP
WE
V
CC
~ 2.5V
10 s
High
28
FLASH MEMORY
~ 2.5V
IL