AM29DL800B AMD [Advanced Micro Devices], AM29DL800B Datasheet - Page 39

• Manufacturer Part Number: AM29DL800B
• Description: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25 C, 3.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
Parameter
Sector Erase Time
Chip Erase Time
Byte Program Time
Word Program Time
Chip Program Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
Table 5 for further information on command definitions.
Parameter
Current
Symbol
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
CC
Word Mode
Byte Mode
. Test conditions: V
Control Pin Capacitance
Parameter Description
SS
SS
Output Capacitance
Input Capacitance
on all pins except I/O pins
on all I/O pins
Typ (Note 1)
CC
= 2.7 V, 1,000,000 cycles.
0.7
5.8
14
11
CC
9
9
P R E L I M I N A R Y
= 3.0 V, one pin at a time.
Am29DL800B
Max (Note 2)
300
360
15
27
17
Test Setup
Unit
sec
sec
sec
V
µs
µs
V
V
OUT
Test Conditions
IN
IN
–100 mA
–1.0 V
–1.0 V
= 0
= 0
Min
= 0
CC
150°C
125°C
, 1,000,000 cycles. Additionally,
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Comments
Typ
8.5
7.5
6
V
CC
+100 mA
12.5 V
Min
Max
10
20
Max
+ 1.0 V
7.5
12
9
Years
Years
Unit
Unit
pF
pF
pF
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