SPD30N06S2L13 Infineon Technologies AG, SPD30N06S2L13 Datasheet

SPD30N06S2L13

Manufacturer Part Number

SPD30N06S2L13

Description

TO-252

Manufacturer

Infineon Technologies AG

Datasheet

1.SPD30N06S2L13.pdf (8 pages)

Specifications of SPD30N06S2L13

Date_code

08+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SPD30N06S2L13

Manufacturer:

INTERSIL

Quantity:

3 251

Current page: 1 of 8
Download datasheet (508Kb)

Feature

• N-Channel

• Enhancement mode

• Logic Level

•=175°C operating temperature

• Avalanche rated

• dv/dt rated

OptiMOS

Type

SPD30N06S2L-13

Maximum Ratings ,at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Reverse diode d v /d t

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

=30A, V

=30 A , V

=100°C

=25°C

= 25 °C,

=44V, d i /d t =200A/µs, T

=25V, R

= = = =

Power-Transistor

=25 Ω

Package

P-TO252

= 25 °C, unless otherwise specified

jmax

=175°C

Ordering Code

Q67040-S4254

Preliminary data

Page 1

Symbol

d v /d t

D puls

j ,

tot

stg

Marking

2N06L13

-55... +175

55/175/56

Product Summary

Value

SPD30N06S2L-13

DS(on)

±20

120

240

125

P-TO252

2001-05-23

Unit

kV/µs

°C

mΩ

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