CY7C128A-20DMB Cypress Semiconductor Corporation., CY7C128A-20DMB Datasheet

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CY7C128A-20DMB

Manufacturer Part Number
CY7C128A-20DMB
Description
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

Specifications of CY7C128A-20DMB

Date_code
00+

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Features
Selection Guide
Cypress Semiconductor Corporation
• Automatic power-down when deselected
• CMOS for optimum speed/power
• High speed
• Low active power
• Low standby power
• TTL-compatible inputs and outputs
• Capable of withstanding greater than 2001V electro-
• V
Maximum Access Time (ns)
Maximum Operating
Current (mA)
Maximum Standby
Current (mA)
static discharge
— 15 ns
— 440 mW (commercial)
— 550 mW (military)
— 110 mW
IH
CE
WE
Logic Block Diagram
OE
of 2.2V
A
A
A
A
A
A
A
10
9
8
7
6
5
4
A
3
INPUT BUFFER
128 x 16 x 8
DECODER
COLUMN
ARRAY
A
2
Commercial
Military
Commercial
Military
A
1
A
0
POWER
DOWN
3901 North First Street
7C128A–15
40/40
120
15
Functional Description
The CY7C128A is a high-performance CMOS static RAM or-
ganized as 2048 words by 8 bits. Easy memory expansion is
provided by an active LOW chip enable (CE), and active LOW
output enable (OE) and three-state drivers. The CY7C128A
has an automatic power-down feature, reducing the power
consumption by 83% when deselected.
Writing to the device is accomplished when the chip enable
(CE) and write enable (WE) inputs are both LOW.
Data on the eight I/O pins (I/O
memory location specified on the address pins (A
A
Reading the device is accomplished by taking chip enable
(CE) and output enable (OE) LOW while write enable (WE) remains
HIGH. Under these conditions, the contents of the memory location
specified on the address pins will appear on the eight I/O pins.
The I/O pins remain in high-impedance state when chip enable
(CE) or output enable (OE) is HIGH or write enable (WE) is LOW.
The CY7C128A utilizes a die coat to insure alpha immunity.
7C128A–20
10
).
C128A–1
40/20
40/20
100
125
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
20
0
1
2
3
4
5
6
7
San Jose
Pin Configurations
7C128A–25
December 1988 – Revised December 1992
100
125
25
20
40
2K x 8 Static RAM
I/O
I/O
GND
I/O
I/O
I/O
A
A
A
A
A
CA 95134
A
A
A
A
A
A
A
A
2
0
4
3
1
0
0
1
7
2
1
0
0
1
2
6
5
4
3
through I/O
7C128A–35
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
10
11
12
DIP/SOJ
Top View
11 12 13 14 15
Top View
3 2 1
7C128A
7C128A
LCC
100
100
35
20
20
24
24
23
22
21
20
19
18
17
16
15
14
13
23
CY7C128A
7
22
21
20
19
18
17
16
) is written into the
WE
V
A
A
OE
A
CE
I/O
I/O
I/O
I/O
I/O
CC
8
9
10
A
WE
OE
A
CE
I/O
I/O
7
6
5
4
3
9
10
C128A–2
408-943-2600
C128A–3
7C128A–45
7
6
0
100
45
20
through

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