MT46H32M32LFCG-6 IT Micron Semiconductor Products, MT46H32M32LFCG-6 IT Datasheet

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MT46H32M32LFCG-6 IT

Manufacturer Part Number
MT46H32M32LFCG-6 IT
Description
Manufacturer
Micron Semiconductor Products
Datasheet
Mobile LPDDR (only)
152-Ball Package-on-Package (PoP) TI-OMAP™
MT46HxxxMxxLxCG
MT46HxxxMxxLxKZ
Features
• Vdd
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
• 4 internal banks for concurrent operation
• Data masks (DM) for masking write data—one mask
• Programmable burst lengths (BLs): 2, 4, 8, or 16
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS-compatible inputs
• On-chip temperature sensor to control self refresh
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• STATUS REGISTER READ (SRR) supported
• Selectable output drive strength (DS)
• Clock stop capability
• 64ms refresh
Table 1:
PDF: 09005aef833913f1/Source: 09005aef833913d6
ddr_mobile_sdram_only_152b_omap_pop.fm - Rev. D 01/09 EN
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Architecture
Configuration
Refresh count
Row addressing
Column addressing
architecture; 2 data accesses per clock cycle
aligned with data for WRITEs
per byte
rate
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.
/
Vddq = 1.70–1.95V
Configuration Addressing
Notes:
x 4 banks x 4 die
128 Meg x 32
16K (A[13:0])
16 Meg x 16
1K (A[9:0])
1. Quad die stack. Each CS configured with two x16 die connected in parallel to make up a 32-bit-
8K
wide bus.
1
2
x 4 banks x 2 die
64 Meg x 32
1
8K (A[12:0])
1K (A[9:0])
8 Meg x 32
152-Ball x32 Mobile LPDDR (only) PoP (TI-OMAP)
8K
1
Options
• Vdd/Vddq
• Configuration
• Device version
• Plastic “green” package
• Timing – cycle time
• Operating temperature range
Notes: 1. BL 16: contact factory for availability.
– 1.8V/1.8V
– 128 Meg x 32 (16 Meg x 16 x 4 banks x 4)
– 64 Meg x 32 (8 Meg x 32 x 4 banks x 2)
– 32 Meg x 32 (8 Meg x 32 x 4 banks)
– 16 Meg x 32 (4 Meg x 32 x 4 banks)
– Single die, standard addressing
– 2-die stack, standard addressing
– 4-die stack, standard addressing
– 152-ball VFBGA
– 152-ball VFBGA
– 5ns @ CL = 3
– 5.4ns @ CL = 3
– 6ns @ CL = 3
– Commercial (0° to +70°C)
– Industrial (–40°C to +85°C)
(14mm x 14mm x 1.0mm)
(14mm x 14mm x 1.2mm
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact factory for remapped SRR output.
32 Meg x 32
8K (A[12:0])
1K (A[9:0])
8 Meg x 32
x 4 banks
8K
©2008 Micron Technology, Inc. All rights reserved.
16 Meg x 32
8K (A[12:0])
512 (A[8:0])
4 Meg x 32
x 4 banks
8K
Preliminary
Features
Marking
128M32
64M32
32M32
16M32
None
CG
-54
KZ
LF
L2
L4
-5
-6
IT
H

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