M58WR032KB7AZB6E Micron Semiconductor Products, M58WR032KB7AZB6E Datasheet

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M58WR032KB7AZB6E

Manufacturer Part Number

M58WR032KB7AZB6E

Description

Manufacturer

Micron Semiconductor Products

Datasheet

1.M58WR032KB7AZB6E.pdf (125 pages)

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Features

April 2009

Supply voltage

– V

– V

– V

Synchronous/asynchronous read

– Synchronous burst read mode: 66 MHz

– Asynchronous/synchronous page read

– Random access times: 70 ns

Synchronous burst read suspend

Programming time

– 10 μs by word typical for fast factory

– Double/quadruple word program option

– Enhanced factory program options

Memory blocks

– Multiple bank memory array: 4 Mbit banks

– Parameter blocks (top or bottom location)

Dual operations

– Program erase in one bank while read in

– No delay between read and write

Block locking

– All blocks locked at power-up

– Any combination of blocks can be locked

– WP for block lock-down

Security

– 128-bit user programmable OTP cells

– 64-bit unique device number

Common Flash interface (CFI)

100 000 program/erase cycles per block

read

mode

program

others

operations

DD

DDQ

PP

= 9 V for fast program

= 1.7 V to 2 V for program, erase and

= 1.7 V to 2 V for I/O buffers

M58WR016KB M58WR032KB M58WR064KB

M58WR016KT M58WR032KT M58WR064KT

16-, 32-, 64-Mbit (×16, multiple bank, burst)

Rev 6

Electronic signature

– Manufacturer code: 20h

– Device codes:

– M58WR032KT (top): 8814h

– M58WR064KT (top): 8810h

RoHS package available

Automotive Certified Parts Available

1.8 V supply Flash memories

M58WR016KT (top): 8812h

M58WR016KB (bottom): 8813h

M58WR032KB (bottom): 8815h

M58WR064KB (bottom): 8811h

VFBGA56 (ZB)

7.7 × 9 mm

FBGA

VFBGA88 (ZQ)

8 × 10 mm

www.numonyx.com

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