BSP613PL6327 Infineon Technologies AG, BSP613PL6327 Datasheet

BSP613PL6327

Manufacturer Part Number

BSP613PL6327

Description

SOT223-4/MOSFET P-CHANNEL

Manufacturer

Infineon Technologies AG

Datasheet

1.BSP613PL6327.pdf (8 pages)

Specifications of BSP613PL6327

Pack_quantity

1000

Comm_code

85412900

Lead_time

Eccn

EAR99

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BSP613PL6327

Manufacturer:

THOMBETT

Quantity:

4 092

Current page: 1 of 8
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Rev.2.6

Feature

• Qualified according to AEC Q101

SIPMOS

Type

BSP613P

Maximum Ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, periodic limited by T

Reverse diode dv/dt

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

JESD22-A114-HBM

ESD Class

P-Channel

Enhancement mode

Avalanche rated

dv/dt rated

Ideal for fast switching buck converter

=2.9A, V

=2.9 A , V

=25°C

=70°C

=25°C

=-48V, di/dt=-200A/µs, T

=-25V, R

Small-Signal-Transistor

Package

PG-SOT223

=25

= 25 °C, unless otherwise specified

jmax

=150°C

jmax

Tape and reel

L6327: 1000pcs/r.

Page 1

Symbol

dv/dt

D puls

tot

j ,

Gate

pin1

stg

Non D r y

Packaging

Source

pin 3

Drain

pin 2,4

-55... +150

55/150/56

Product Summary

Class 1c

Value

-11.6

-2.9

-2.3

0.18

±20

DS(on)

150

1.8

PG-SOT223

Marking

B S P 613 P

2008-03-27

0.13

BSP613P

-60

-2.9

Unit

kV/µs

°C

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