AGR18125E TRIQUINT [TriQuint Semiconductor], AGR18125E Datasheet

AGR18125E

Manufacturer Part Number

AGR18125E

Description

125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Manufacturer

TRIQUINT [TriQuint Semiconductor]

Datasheet

1.AGR18125E.pdf (6 pages)

Available stocks

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AGR18125EF

Manufacturer:

MIT

Quantity:

2 165

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Meier Automation Equipment Co., Limited

Part Number:

AGR18125EF

Manufacturer:

ASI

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Introduction

The AGR18125E is a 125 W, 26 V, N-channel gold-

metallized, laterally diffused metal oxide semicon-

ductor (LDMOS) RF power field effect transistor

(FET) suitable for global system for mobile communi-

cation (GSM), enhanced data for global evolution

(EDGE), and multicarrier class AB power amplifier

applications. This device is manufactured using

advanced LDMOS technology offering state-of-the-

art performance and reliability. It is packaged in an

industry-standard package and is capable of deliver-

ing a minimum output power of 125 W which makes

it ideally suited for today’s RF power amplifier appli-

cations.

Features

AGR18125E

125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor

AGR18125EU (unflanged)

Typical performance ratings for GSM EDGE

(f = 1.840 GHz, P

— Modulation spectrum:

Typical performance over entire digital communi-

cation system (DCS) band:

— P1dB: 125 W typical (typ).

— Power gain: @ P1dB = 13.5 dB.

— Efficiency: @ P1dB = 50% typ.

— Return loss: –10 dB.

High-reliability, gold-metallization process.

Low hot carrier injection (HCI) induced bias drift

over 20 years.

Internally matched.

High gain, efficiency, and linearity.

Integrated ESD protection.

125 W minimum output power.

Device can withstand 10:1 voltage standing wave

ratio (VSWR) at 28 Vdc, 1.840 GHz, 125 W contin-

uous wave (CW) output power.

Large signal impedance parameters available.

@ ± 400 kHz = –60 dBc.

@ ± 600 kHz = –72 dBc.

)

Figure 1. Available Packages

OUT

= 50 W)

AGR18125EF (flanged)

5B 03 STYLE 1

Agere Systems - Proprietary

Table 1. Thermal Characteristics

Table 2. Absolute Maximum Ratings*

* Stresses in excess of the absolute maximum ratings can cause

Table 3. ESD Rating*

* Although electrostatic discharge (ESD) protection circuitry has

Caution: MOS devices are susceptible to damage from elec-

Drain-source Voltage

Gate-source Voltage

Total Dissipation at T

Operating Junction Tempera-

Storage Temperature Range

Thermal Resistance,

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

during all handling, assembly, and test operations. Agere

employs a human-body model (HBM), a machine model (MM),

and a charged-device model (CDM) qualification requirement in

order to determine ESD-susceptibility limits and protection

design evaluation. ESD voltage thresholds are dependent on the

circuit parameters used in each of the models, as defined by

JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and

JESD22-C101A (CDM) standards.

permanent damage to the device. These are absolute stress rat-

ings only. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute

maximum ratings for extended periods can adversely affect

device reliability.

Derate Above 25 °C:

ture

Junction to Case:

AGR18125E

AGR18125EU

AGR18125EF

AGR18125EU

AGR18125EF

AGR18125EU

AGR18125EF

HBM

CDM

Parameter

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

Parameter

Minimum (V)

= 25 °C:

1500

500

Sym

ı JC

Sym

DSS

—

STG

Value

0.5

–65, 150

–0.5, 15 Vdc

Value

350

200

2.0

PEAK Devices

Class

°C/W

Unit

W/°C

Unit

Vdc

°C

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AGR18125E Summary of contents

Page 1

... AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18125E is a 125 N-channel gold- metallized, laterally diffused metal oxide semicon- ductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communi- cation (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications ...

Page 2

W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless otherwise specified: T Table 4. dc Characteristics Parameter Drain-source Breakdown Voltage (V Gate-source Leakage Current (V Zero Gate Voltage Drain Leakage Current (V Forward ...

Page 3

... C12 C11 C10 C9 C8 Z13 Z10 C2 C3 Z11 Z12 Schematic B. Component Layout Figure 2. AGR18125E Test Circuit C19 C20 C21 C22 C23 C24 C25 Z24 Z21 Z22 C18 Z23 RF OUTPUT C17 Z20 Z19 Z18 Z17 Z16 C16 C15 ...

Page 4

W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Typical Performance Characteristics Ω 0 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) MHz (f) (Complex Source Impedance) 865 (f1) 880 (f2) 895 (f3) INPUT MATCH Figure 3. Series ...

Page 5

Typical Performance Characteristics Figure 7. Modulation Spectrum, Gain, and Efficiency vs. Frequency Figure 8. Power Gain and Return Loss vs. Frequency 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor (continued) Figure 4. Power Gain vs. P Figure 5. Modulation ...

Page 6

... All dimensions are in inches. Tolerances are ±0.005 in. unless specified. AGR18125EU 1 A PEAK DEVICES M-AGR21125U AGR18125XU YYWWUR YYWWLL XXXXX ZZZZZZZ ZZZZZZZ 2 AGR18125EF 1 PEAK DEVICES M-AGR21125F AGR18125XF YYWWUR YYWWLL XXXXX ZZZZZZZ ZZZZZZZ 2 Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. ...

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