AGR18060E TRIQUINT [TriQuint Semiconductor], AGR18060E Datasheet

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AGR18060E

Manufacturer Part Number
AGR18060E
Description
60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor
Manufacturer
TRIQUINT [TriQuint Semiconductor]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AGR18060EF
Manufacturer:
AGERE
Quantity:
3
Part Number:
AGR18060EF
Manufacturer:
ASI
Quantity:
20 000
Introduction
The AGR18060E is a 60 W, 26 V N-channel laterally
diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
enhanced data for global evolution (EDGE), global
system for mobile communication (GSM), and single-
carrier or multicarrier class AB power amplifier appli-
cations. It is packaged in an industry-standard pack-
age and is capable of delivering a minimum output
power of 60 W, which makes it ideally suited for
today’s wireless base station RF power amplifier
applications.
Features
AGR18060E
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Typical EDGE performance:
1880 MHz, 26 V, I
— Output power (P
— Power gain: 15 dB.
— Efficiency: 34%.
— Modulation spectrum:
— Error vector magnitude (EVM) = 2%.
Typical performance over entire GSM band:
— P
— Power gain: @ P
— Efficiency @ P
— Return loss: –10 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 26 Vdc, 1805 MHz, 60 W continu-
ous wave (CW) output power.
Large signal impedance parameters available.
@ ±400 kHz = –62 dBc.
@ ±600 kHz = –73 dBc.
1dB
: 60 W typ.
Figure 1. Available Packages
AGR18060EU
1dB
DQ
OUT
1dB
= 500 mA
= 52% typical.
): 20 W.
= 14 dB.
AGR18060EF
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
Caution: MOS devices are susceptible to damage from elec-
Drain-source Voltage
Gate-source Voltage
Total Dissipation at T
Operating Junction Tempera-
Storage Temperature Range
Thermal Resistance,
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Derate Above 25 ˇC:
ture
Junction to Case:
AGR18060E
AGR18060EU
AGR18060EF
AGR18060EU
AGR18060EF
AGR18060EU
AGR18060EF
HBM
CDM
Parameter
MM
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
Parameter
C
Minimum (V)
= 25 °C:
1500
500
50
R
R
Sym
ı JC
ı JC
Sym
V
T
V
P
P
T
DSS
STG
GS
D
D
J
Value
1.00
1.00
–65, 150
–0.5, 15
Value
1.00
1.00
175
175
200
65
PEAK Devices
Class
1B
A
4
°C/W
°C/W
Unit
W/°C
W/°C
Unit
Vdc
Vdc
°C
°C
W
W

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AGR18060E Summary of contents

Page 1

... AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction The AGR18060E N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and single- carrier or multicarrier class AB power amplifier appli- cations ...

Page 2

W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless otherwise specified: T Table 4. dc Characteristics Drain-source Breakdown Voltage (V Gate-source Leakage Current (V Zero Gate Voltage Drain Leakage ...

Page 3

... Fixed film R1 510 Ω, 1/4 W, 0.08 x 0.13; R2 560 kΩ, 1/4 W, 0.08 x 0.13; R3 4.7 Ω, 1/4 W, 0.08 x 0.13. chip resistors: PCB etched circuit boards. ® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, Taconic Figure 2. AGR18060E Test Circuit Schematic 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor C14 ...

Page 4

W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Typical Performance Characteristics Ω 0 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo (Complex Source Impedance ...

Page 5

Typical Performance Characteristics 80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 0.00 0. Figure 4. Output Power and Efficiency Versus Input Power ...

Page 6

W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Typical Performance Characteristics IM3 1760 1780 500 mA Figure 7. Gain, Efficiency, IRL, Versus Signal Frequency ...

Page 7

Typical Performance Characteristics 17.00 16.00 15.00 14.00 13.00 12.00 1. FREQUENCY = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING. DD -10.0 -20.0 -30.0 -40.0 -50.0 -60.0 -70.0 10. FREQUENCY = 1842.5 MHz, ...

Page 8

W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Typical Performance Characteristics 50.00 45.00 40.00 35.00 30.00 25.00 20.00 15.00 10.00 5.00 0.00 1. Figure 11. Power Gain, IRL, IMD, and Efficiency Versus ...

Page 9

... All dimensions are in inches. Tolerances are ±0.005 in. unless specified. AGR18060EU PEAK DEVICES AGR18060EU XXXX AGR18060EF PEAK DEVICES XXXX = 4 Digit Trace Code 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor AGR18060EF 3 XXXX 2 PINS: 1. DRAIN 2. GATE 3. SOURCE PINS: 1. DRAIN 2 ...

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