AGR18060E TRIQUINT [TriQuint Semiconductor], AGR18060E Datasheet - Page 3

• Manufacturer Part Number: AGR18060E
• Description: 60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor
• Manufacturer: TRIQUINT [TriQuint Semiconductor]

Test Circuit Illustrations for AGR18060E
Parts List:
V
C2
RF INPUT
GG
Microstrip line: Z1 0.065 in. x 0.283 in.; Z2 0.065 in. x 0.700 in.; Z3 0.065 in. x 0.308 in.; Z4 0.856 in.x 0.262 in.; Z5 1.045 in. x 0.140 in.;
Z6 0.051 in. x 0.470 in.; Z7 1.220 in. x 0.104 in.; Z8 0.998 in. x 0.422 in.; Z9 0.132 in. x 0.050 in.; Z10 0.984 in. x 0.093 in.;
Z11 0.132 in. x 0.244 in.; Z12 0.289 in. x 0.332 in.; Z13 0.132 in. x 0.200 in.; Z14 0.065 in. x 0.250 in.
ATC
Kemet
Johanson Giga-Trim
Vitramon
Murata
0603:
Fair-Rite
Sprague
Fixed film
PCB etched circuit boards.
Taconic
R2
®
C14 220 pF.
B case chip capacitors: C3, C4: 10 pF, 100B100JCA500X; C11 8.2 pF 100B8R2JCA500X; C7 1000 pF, 100B102JCA500X.
®
®
®
Z1
B case chip capacitors
®
®
0805:
®
ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
C5
chip resistors:
ferrite bead: FB1, #2743019447.
tantalum, SMT: C1, C10: 22 µF, 35 V.
C1
1206:
C13 0.01 µF, GRM40X7R103K100AL.
C2, C8: 22000 pF.
R1
Z2
®
variable capacitors: C5, C17: 0.4 pF—2.5 pF.
R1 510 Ω, 1/4 W, 0.08 x 0.13; R2 560 kΩ, 1/4 W, 0.08 x 0.13; R3 4.7 Ω, 1/4 W, 0.08 x 0.13.
C4
FB1
R3
:
Z3
C9, C12: 0.10 µF, CDR33BX104AKWS.
C
1
2
C
Figure 2. AGR18060E Test Circuit Schematic
Z4
1
C2
R2
3
C1
R1
C5
C14
Z5
R3
FB1
C3
C12 C13 C14
B. Component Layout
Gate
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
C4
DUT
A. Schematic
1
2
C3
3
Z6
S1
S3
Z7
Gnd
3
Z15
2
S2
S4
ε
r = 3.5.
1
Z8
C
W1
7
Drain
PINS
1. DRAIN
2. GATE
3. SOURCE
C7
C10
Z9
C8
C6
C
8
C11
C9
Z10
Z11
C9
Z12
C10
Z13
C11
OUTPUT
Z14
RF
V
DD