AGR18060E TRIQUINT [TriQuint Semiconductor], AGR18060E Datasheet - Page 2

• Manufacturer Part Number: AGR18060E
• Description: 60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor
• Manufacturer: TRIQUINT [TriQuint Semiconductor]

60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
Table 4. dc Characteristics
Table 5. RF Characteristics
Gate-source Leakage Current (V
Zero Gate Voltage Drain Leakage Current (V
Forward Transconductance (V
Gate Threshold Voltage (V
Gate Quiescent Voltage (V
Drain-source On-voltage (V
Transfer Capacitance
Two-Tone Common-source Amplifier Power Gain
Two-Tone Drain Efficiency
Third-order Intermodulation Distortion*
Output Power at 1 dB Gain Compression
Ruggedness
Drain-source Breakdown Voltage (V
Input Return Loss
(V
(Part is internally matched both on input and output.)
(V
and 1880 MHz, tone spacing = 100 kHz)
(V
and 1880 MHz, tone spacing = 100 kHz)
(V
and 1880 MHz, tone spacing = 100 kHz)
(V
and 1880 MHz, tone spacing = 100 kHz)
(V
(V
VSWR = 10:1 [all phase angles])
DS
DD
DD
DD
DD
DD
DD
= 26 V, V
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 V, P
= 26 V, P
GS
OUT
OUT
OUT
OUT
OUT
OUT
= 0, f = 1 MHz)
= 60 W CW, f = 1880 MHz, I
= 60 W CW, I
= 60 W PEP, I
= 60 W PEP, I
= 60 W PEP, I
= 60 W PEP, I
Functional Tests (in Agere Systems Supplied Test Fixture)
DS
DS
GS
P
P
a
= 10 V, I
= 26 V, I
a
DS
= 10 V, I
a r
a r
GS
m
= 10 V, I
m
DQ
t e
t e
GS
= 5 V, V
r e
DQ
DQ
DQ
DQ
r e
= 500 mA, f = 1880 MHz,
D
D
D
= 0 V, I
= 180 µA)
= 500 mA)
= 500 mA, f = 1805 MHz
= 500 mA, f = 1805 MHz
= 500 mA, f = 1805 MHz
= 500 mA, f = 1805 MHz
= 0.45 A)
D
= 0.45 A)
DS
Dynamic Characteristics
(in Supplied Test Fixture)
DS
D
Off Characteristics
On Characteristics
= 0 V)
= 26 V, V
= 90 µA)
= 300µA
DQ
= 500 mA)
GS
= 0 V)
V
S
V
V
V
S
C
(BR)DSS
y
I
I
G
DS(on)
GS(th)
GS(Q)
C
y
GSS
DSS
P
m
G
= 30 °C.
IM3
IRL
m
FS
RSS
1dB
Ψ
η
PS
b
b
l o
l o
No degradation in output
power.
M
65
—
—
—
—
—
—
M
—
—
—
—
—
—
n i
n i
0.08
T
4.0
3.6
—
—
—
—
T
–26
–10
y
1.3
15
41
60
y
p
p
M
100
1.8
5.5
4.8
M
—
—
—
—
a
—
—
—
—
—
—
a
x
x
µAdc
µAdc
U
Vdc
Vdc
Vdc
Vdc
U
dBc
S
n
dB
dB
pF
W
%
n
t i
t i