ATF-13100-GP3 HP [Agilent(Hewlett-Packard)], ATF-13100-GP3 Datasheet - Page 2

• Manufacturer Part Number: ATF-13100-GP3
• Description: 2-18 GHz Low Noise Gallium Arsenide FET
• Manufacturer: HP [Agilent(Hewlett-Packard)]

ATF-13100 Absolute Maximum Ratings
Part Number Ordering Information
ATF-13100 Typical Performance, T
ATF-13100 Noise Parameters:
Thermal Resistance:
Liquid Crystal Measurement:
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
V
Symbol
2.0
1.5
1.0
0.5
DS
0
T
2.0
V
V
V
T
I
P
= 2.5V, I
STG
Freq.
DS
GD
CH
DS
GS
GHz
T
12.0
16.0
4.0
6.0
8.0
Part Number
ATF-13100-GP3
NF
O
FREQUENCY (GHz)
DS
4.0
= 20 mA, T
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation
Channel Temperature
Storage Temperature
G
A
6.0
8.0 10.0 12.0 16.0
NF
Parameter
dB
0.4
0.7
0.8
1.1
1.5
A
O
= 25 C.
20
15
10
5
0
[2,3]
Mag
0.60
0.32
0.25
0.23
0.32
V
Figure 2. Optimum Noise Figure and
Associated Gain vs. I
V
1 m Spot Size
DS
4.0
3.0
2.0
1.0
DS
jc
0
= 250 C/W; T
= 2.5 V, I
= 2.5V, f = 12.0 GHz.
opt
Devices Per Tray
A
Units
mW
mA
5
= 25 C
V
V
V
C
C
Ang
-165
-112
102
10
30
68
5-34
DS
50
I
DS
15
[4]
= 20 mA
Maximum
CH
(mA)
-65 to +175
Absolute
NF
G
20
DS
= 150 C
A
O
.
I
225
175
+ 5
DSS
-4
-6
R
25
0.32
0.21
0.15
0.09
0.21
N
/50
30
[1]
35
12
10
8
6
Notes:
1. Permanent damage may occur if
2. T
3. Derate at 4 mW/ C for
4. The small spot size of this tech-
any of these limits are exceeded.
T
nique results in a higher, though
more accurate determination of
than do alternate methods. See
MEASUREMENTS section for
more information.
MOUNTING SURFACE
MOUNTING SURFACE
= 25 C.
> 119 C.
jc