ATF-13100-GP3 HP [Agilent(Hewlett-Packard)], ATF-13100-GP3 Datasheet - Page 3

• Manufacturer Part Number: ATF-13100-GP3
• Description: 2-18 GHz Low Noise Gallium Arsenide FET
• Manufacturer: HP [Agilent(Hewlett-Packard)]

Typical Scattering Parameters,
A model for this device is available in the DEVICE MODELS section.
ATF-13100 Chip Dimensions
254 m
10 mil
Note: Die thickness is 4.5 mil, and backside metallization is
Freq.
GHz
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
4.65 mil
118 m
200 Å Ti and 2000 Å Au.
Mag.
.96
.92
.85
.79
.73
.68
.63
.62
.59
.59
.57
.60
.64
.67
.73
.77
.80
1.97 mil
50 m
S
S
11
Ang.
-113
-132
-151
-167
173
155
136
116
-27
-41
-58
-76
-95
98
83
72
63
356 m
14 mil
D
G
1.97 mil
50 m
13.4
13.4
13.1
12.9
12.4
12.0
11.4
10.9
10.3
dB
9.7
9.0
8.6
7.9
7.1
5.8
4.6
3.5
S
Common Emitter, Z
Mag.
3.97
3.71
3.51
1.96
1.70
1.50
4.68
4.65
4.54
4.40
4.19
3.27
3.07
2.83
2.69
2.47
2.26
S
3.62 mil
21
1.73 mil
92 m
44 m
5-35
Ang.
153
140
126
113
100
-16
-26
-35
87
75
63
53
40
30
19
-6
7
O
= 50 , T
-26.9
-23.6
-21.4
-19.8
-18.7
-18.0
-17.5
-17.1
-16.8
-16.5
-16.5
-16.4
-16.4
-16.4
-16.9
-17.0
-17.4
dB
A
= 25 C, V
Mag.
.045
.066
.085
.102
.116
.126
.134
.140
.144
.149
.150
.151
.151
.152
.143
.141
.135
S
12
DS
Ang.
-16
-25
-34
-40
-45
-48
75
67
59
50
42
34
25
18
11
-9
2
= 2.5 V, I
Mag.
DS
.55
.52
.49
.44
.38
.30
.24
.18
.13
.08
.02
.08
.15
.23
.31
.36
.40
= 20 mA
S
22
-104
Ang.
160
106
103
100
-16
-24
-33
-41
-48
-54
-64
-75
-84
90
82
72