K4T1G044QF SAMSUNG [Samsung semiconductor], K4T1G044QF Datasheet - Page 28

• Manufacturer Part Number: K4T1G044QF
• Description: 1Gb F-die DDR2 SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T1G044QF
K4T1G084QF
K4T1G164QF
DQS
Note1
NOTE : DQS signal must be monotonic between V
V
V
V
V
Setup Slew Rate
V
V
IL
IL
Falling Signal
REF
DDQ
IH
IH
(DC)max
(AC)max
(DC)min
(AC)min
V
V
V
V
V
V
V
(DC)
DDQ
IH
IH
REF
IL
IL
SS
Figure 8. IIIustration of nominal slew rate for tDS (single-ended DQS)
(DC)max
(AC)max
(AC)min
(DC)min
V
(DC)
SS
V
region
REF
=
V
to ac
∆TF
REF
(DC) - V
datasheet
∆TF
nominal slew
tDS
IL
rate
(AC)max
tDH
IL
- 28 -
(AC)max and V
Setup Slew Rate
Rising Signal
∆TR
IH
(AC)min.
tDS
nominal
slew rate
=
V
IH
(AC)min - V
tDH
V
REF
region
∆TR
to ac
REF
(DC)
DDR2 SDRAM
Rev. 1.11