K4T1G044QF SAMSUNG [Samsung semiconductor], K4T1G044QF Datasheet - Page 29

• Manufacturer Part Number: K4T1G044QF
• Description: 1Gb F-die DDR2 SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T1G044QF
K4T1G084QF
K4T1G164QF
V
V
V
V
V
V
Setup Slew Rate
IL
IL
REF
DDQ
IH
IH
Falling Signal
(DC)max
(AC)max
(AC)min
(DC)min
(DC)
DQS
DQS
V
nominal
SS
Figure 9. IIIustration of tangent line for tDS (differential DQS, DQS)
line
V
region
REF
=
tangent line[V
to ac
∆TF
datasheet
tDS
tangent
REF
line
∆TF
(DC) - V
Setup Slew Rate
tDH
Rising Signal
IL
- 29 -
(AC)max]
nominal
line
=
tangent line[V
∆TR
tDS
tangent
line
IH
tDH
(AC)min - V
∆TR
V
REF
region
to ac
REF
(DC)]
DDR2 SDRAM
Rev. 1.11