BSP123_10 INFINEON [Infineon Technologies AG], BSP123_10 Datasheet - Page 6

• Manufacturer Part Number: BSP123_10
• Description: SIPMOS Small-Signal-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
pF
10
10
10
10
24
20
18
16
14
12
10
8
6
4
2
0
-60
3
2
1
0
0
BSP123
DS
= f (T
)
4
-20
D
GS
j
)
8
= 0.37 A, V
=0, f=1 MHz, T
20
12
98%
16
typ
60
20
GS
100
24
= 10 V
j
= 25 °C
28
°C
C
C
T
C
V
V
oss
rss
j
iss
DS
180
36
Page 6
Rev. 1.5
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j
F
GS(th)
= f (V
10
10
10
10
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
V
A
-1
-2
1
0
-60
1
0
0
BSP123
= f (T j )
SD
)
0.4
-20
GS
0.8
= V
20
DS ;
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
I
D
1.6
60
typ.
2%
98%
=50µA
2
100
2010-06-22
2.4
BSP123
°C
T
V
V
j
SD
160
3