BSP298_07 INFINEON [Infineon Technologies AG], BSP298_07 Datasheet - Page 8

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BSP298_07

Manufacturer Part Number
BSP298_07
Description
SIPMOS Small-Signal Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Avalanche energy E
parameter: I
R
Safe operating area I
parameter : D = 0.01, T
Rev. 2.2 Semiconductor Group
E
GS
AS
= 25 , L = 125 mH
140
120
110
100
mJ
90
80
70
60
50
40
30
20
10
0
20
D
40
= 1.35 A, V
60
D
=f(V
C
=25°C
AS
80
DS
= (T
DD
)
100
= 50 V
j
)
120
°C
T
j
160
Drain-source breakdown voltage
V
V
(BR)DSS
(BR)DSS
8
480
460
450
440
430
420
410
400
390
380
370
360
V
-60
= (T
-20
j
)
20
60
100
2007-02-26
BSP 298
T
°C
j
160

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