HYB514171BJ-50- SIEMENS [Siemens Semiconductor Group], HYB514171BJ-50- Datasheet
HYB514171BJ-50-
Related parts for HYB514171BJ-50-
HYB514171BJ-50- Summary of contents
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Dynamic RAM Advanced Information • 262 144 words by 16-bit organization • operating temperature • Fast access and cycle time • RAS access time (-50 version (-60 version) • CAS ...
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... Read/Write Input Output Enable Data Input/Output Power Supply (+ 5 V) Ground ( Connection 2 HYB 514171BJ-50/-60 256k 16 DRAM Description 50 ns 256k 16 DRAM 60 ns 256k 16 DRAM I/O9 - I/O16 Operation High-Z Standby High-Z Refresh High-Z Lower byte read Dout Upper byte read Dout Word read Don't care ...
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... RAS HYB 514171BJ-50/-60 256k 16 DRAM V SS I/O16 I/O15 I/O14 I/O13 V SS I/O12 I/O11 I/O10 I/O9 N.C. LCAS UCAS SPP02811 1998-10-01 ...
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... Refresh Counter ( Row 9 Address Buffers (9) No.1 Clock RAS Generator Block Diagram Semiconductor Group I/O1 I/O2 Data In Buffer 9 9 Row Decoder 4 HYB 514171BJ-50/-60 256k 16 DRAM . . . I/O16 . . . . Data Out OE Buffer Column Decoder Sense Amplifier I/O Gating 512 Memory Array 512 512 x 512 x 16 ...
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... CC1 -60 version I CC2 -50 version I CC3 -60 version I -50 version CC4 -60 version I CC5 V – 0 -50 version CC6 -60 version 5 HYB 514171BJ-50/-60 256k 16 DRAM Limit Values Unit Notes min. max 2 – 1.0 0 2.4 – – 0 – – 10 ...
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... CRP – REF t – RAC t – CAC t – – OEA 6 HYB 514171BJ-50/-60 256k 16 DRAM Limit Values Unit min. max. – – – Limit Values Unit Note -50 -60 max. min. max. – 110 – ns – ...
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... DZC t 140 RWC t 75 RWD t 40 CWD t 50 AWD t 15 OEH HYB 514171BJ-50/-60 256k 16 DRAM Limit Values Unit Note -50 -60 max. min. max. – 30 – ns – 0 – ns – 0 – ns – 0 – ns – 0 – ...
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... RHCP t 80 PRWC t 55 CPWD t 5 CSR t 10 CHR t 0 RPC t 10 WRP t 10 WRH t 25 CPT 8 HYB 514171BJ-50/-60 256k 16 DRAM Limit Values Unit Note -50 -60 max. min. max. – 10 – – 200k 60 200k ns – 35 – ns – 90 – ns – ...
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... RAD t > t WCS WCS (MIN the cycle is a read-write cycle and I/O will contain data read AWD (MIN.) 9 HYB 514171BJ-50/-60 256k 16 DRAM case of it can be changed once CC4 can be met specified as RCD (MAX.) t limit, then access time is RCD (MAX.) t can be met ...
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... RCD RSH t CAS t t RAD RAL t t CAH ASC Column t RAH t RCS OEA t DZC t DZO t CAC t CLZ Hi Z Valid Data OUT t RAC 10 HYB 514171BJ-50/-60 256k 16 DRAM CRP t ASR Row t RCH t RRH t CDD t ODD t OFF t OEZ Hi Z SPT03043 1998-10-01 ...
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... Write Cycle (Early Write) Semiconductor Group RAS t CSH t t RCD RSH t CAS t t RAD RAL t t CAH ASC Column t CWL t WCS WCH t RWL Valid Data HYB 514171BJ-50/-60 256k 16 DRAM CRP t ASR Row SPT03044 1998-10-01 ...
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... RC t RAS t CSH t t RCD RSH t CAS t t RAD RAL t t CAH ASC Column t CWL OEH t ODD t t DZO t t DZC DS Valid Data t OEZ t CLZ t OEA HYB 514171BJ-50/-60 256k 16 DRAM CRP t ASR Row RWL SPT03045 1998-10-01 ...
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... RAH t CAH t ASC Column RAD t AWD t CWD t RWD RCS t OEA t DZC t DZO t CAC t CLZ Data OUT t RAC 13 HYB 514171BJ-50/-60 256k 16 DRAM RSH t CAS CRP t ASR Row t CWL t RWL OEH Valid Data IN t ODD t OEZ SPT03046 1998-10-01 ...
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... OEA OEA t DZC t t DZO DZO t ODD t OFF t OEZ t t CAC CAC t t CLZ CLZ Valid Data OUT 14 HYB 514171BJ-50/-60 256k 16 DRAM CRP t RHCP t RSH t CAS t CAH t ASR t ASC Column Row t RCH t RCS t RRH t CPA OEA t t ...
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... Column t t CWL t CWL WCS t t WCH WCH Valid Valid Data IN Data HYB 514171BJ-50/-60 256k 16 DRAM RSH CRP t CAS t RAL t CAH t t ASC ASR Column Row t RWL t t CWL WCS t WCH t WP ...
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... ODD t CPA t t ODD DZC Data IN Data CAC OEZ OEZ Data Data OUT OUT 16 HYB 514171BJ-50/-60 256k 16 DRAM t RSH t t CAS CRP t RAL t CAH t ASC Column t t CPWD RWL t CWD t CWL t AWD OEA t OEH ...
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... V IH RAS UCAS LCAS ASR V IH Address I/O (Outputs "H" or "L" RAS-Only Refresh Cycle Semiconductor Group RAS t RAH Row HYB 514171BJ-50/-60 256k 16 DRAM CRP t RPC t ASR Row SPT03050 1998-10-01 ...
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... ODD V IH I/O (Inputs CDD t OEZ V OH I/O (Outputs OFF "H" or "L" CAS-Before-RAS Refresh Cycle Semiconductor Group t RAS t CHR t CSR t WRH t WRP 18 HYB 514171BJ-50/-60 256k 16 DRAM RPC Hi Z 1998-10-01 t CRP SPT03051 ...
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... LCAS WRP ODD V IH I/O (Inputs CDD t OEZ V OH I/O (Outputs OFF "H" or "L" CAS-Before-RAS Self Refresh Cycle Semiconductor Group t RASS t CSR t WRH 19 HYB 514171BJ-50/-60 256k 16 DRAM t RPS t CRP t CHS Hi Z 1998-10-01 SPT03052 ...
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... Semiconductor Group RAS t t RCD RSH t WRP t CAH Column t RRH OEA t DZO t CAC t CLZ t RAC Valid Data OUT 20 HYB 514171BJ-50/-60 256k 16 DRAM RAS t t CHR CRP t t WRH ASR t CDD t ODD t OFF t OEZ Hi Z 1998-10-01 Row SPT03053 ...
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... Hidden Refresh Cycle (Early Write) Semiconductor Group RAS RP t RSH t CAH Column t t WCH WRP Valid Data HYB 514171BJ-50/-60 256k 16 DRAM RAS CHR CRP t ASR WRH Row SPT03054 1998-10-01 ...
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... RAL t CAH t ASC Column CAC t t WRH RCS t OEA t DZC t DZO t CLZ t WCS t RWL t CWL t WCH t t WRH Data HYB 514171BJ-50/-60 256k 16 DRAM t RP RSH t ASR Row t RRH t RCH t CDD t ODD t OFF t OEZ Data OUT SPT03055 1998-10-01 ...
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... Package Outlines Plastic Package, P-SOJ- 40-1 (SMD) (Plastic small outline J-leaded) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group HYB 514171BJ-50/-60 256k 23 16 DRAM Dimensions in mm 1998-10-01 ...