HYB514171BJ-50- SIEMENS [Siemens Semiconductor Group], HYB514171BJ-50- Datasheet - Page 7

• Manufacturer Part Number: HYB514171BJ-50-
• Description: 256k x 16-Bit Dynamic RAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

AC Characteristics (cont’d)
T
Parameter
Column address to RAS lead time
Read command setup time
Read command hold time
Read command hold time ref. to RAS
CAS to output in low-Z
Output buffer turn-off delay from CAS
Output buffer turn-off delay from OE
Data to OE low delay
CAS high to data delay
OE high to data delay
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
Data to CAS low delay
Read-Modify-Write Cycle
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE command hold time
Fast Page Mode Cycle
Fast page mode cycle time
Semiconductor Group
A
= 0 to 70 C;
V
SS
= 0 V;
V
CC
5, 6
= 5 V
10 %,
t
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
T
RAL
RCS
RCH
RRH
CLZ
OFF
OEZ
DZO
CDD
ODD
WCH
WP
WCS
RWL
CWL
DS
DH
DZC
RWC
RWD
CWD
AWD
OEH
PC
= 5 ns
7
min.
25
0
0
0
0
0
0
0
15
15
10
10
0
15
15
0
10
0
140
75
40
50
15
35
-50
Limit Values
max. min.
–
–
–
–
–
15
15
–
–
-
–
–
–
–
–
–
–
–
–
–
–
–
–
–
HYB 514171BJ-50/-60
30
0
0
0
0
0
0
0
20
20
10
10
0
15
15
0
15
0
160
90
45
60
20
40
-60
256k
max.
–
–
–
–
–
20
20
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
16 DRAM
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1998-10-01
11
11
8
12
12
13
14
14
15
16
16
13
15
15
15