HYB514175BJ-50- SIEMENS [Siemens Semiconductor Group], HYB514175BJ-50- Datasheet

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HYB514175BJ-50-

Manufacturer Part Number

HYB514175BJ-50-

Description

256k x 16-Bit EDO-DRAM

Manufacturer

SIEMENS [Siemens Semiconductor Group]

Datasheet

1.HYB514175BJ-50-.pdf (22 pages)

Current page: 1 of 22
Download datasheet (180Kb)

256k

Advanced Information

• 262 144 words by 16-bit organization

• 0 to 70 C operating temperature

• Fast access and cycle time

• RAS access time:

• CAS access time:

• Cycle time:

• Hyper page mode (EDO) cycle time

• High data rate

• Single + 5 V ( 10 %) supply with a built-in

Semiconductor Group

50 ns (-50 version)

55 ns (-55 version)

60 ns (-60 version)

13 ns (-50 & -55 version)

15 ns (-60 version)

89 ns (-50 version)

94 ns (-55 version)

104 ns (-60 version)

20 ns (-50 & -55 version)

25 ns (-60 version)

50 MHz (-50 & -55 version)

40 MHz (-60 version)

V

BB

generator

16-Bit EDO-DRAM

1

• Low Power dissipation

• Standby power dissipation

• Output unlatched at cycle end allows

• Read, write, read-modify write,

• 2 CAS/1 WE control

• All inputs and outputs TTL-compatible

• 512 refresh cycles/16 ms

• Plastic Packages:

max. 1100 mW active (-50 version)

max. 1045 mW active (-55 version)

max. 935 mW active (-60 version)

11 mW standby (TTL)

5.5 mW max. standby (CMOS)

two-dimensional chip selection

CAS-before-RAS refresh, RAS-only

refresh, hidden-refresh and hyper page

(EDO) mode capability

P-SOJ-40-1 400 mil width

HYB 514175BJ-50/-55/-60

1998-10-01

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