HYB514175BJ-50- SIEMENS [Siemens Semiconductor Group], HYB514175BJ-50- Datasheet - Page 6

• Manufacturer Part Number: HYB514175BJ-50-
• Description: 256k x 16-Bit EDO-DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

DC Characteristics (cont’d)
T
Parameter
Standby
(RAS = LCAS = UCAS = WE =
Average
CAS-before-RAS refresh mode
Capacitance
T
Parameter
Input capacitance (A0 to A8)
Input capacitance (RAS, UCAS, LCAS, WE, OE)
Output capacitance (l/O1 to l/O16)
AC Characteristics
T
Parameter
Common Parameters
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
Semiconductor Group
A
A
A
= 0 to 70 C;
= 0 to 70 C;
= 0 to 70 C;
V
V
CC
CC
supply current
supply current during
V
V
V
SS
CC
SS
= 0 V;
= 0 V;
= 5 V
5, 6
V
V
10 %,
CC
CC
= 5 V
V
= 5 V
CC
-50 version
-55 version
-60 version
f
– 0.2 V)
= 1 MHz
Symbol
t
t
t
t
t
t
t
t
t
t
10 %,
10 %,
RC
RP
RAS
CAS
ASR
RAH
ASC
CAH
RCD
RAD
t
t
T
T
= 2 ns
= 2 ns
Symbol
I
I
min. max. min. max. min. max.
89
35
50
8
0
8
0
8
12
10
6
CC5
CC6
Symbol
C
C
C
-50
I1
I2
IO
–
–
10k
10k
–
–
–
–
37
25
HYB 514175BJ/BJL-50/-55/-60
min.
–
–
Limit Values
94
35
55
8
0
8
0
8
12
10
Limit Values
min.
–
–
–
-55
–
–
10k
10k
–
–
–
–
43
30
Limit Values
256k
max.
1
200
190
170
104
40
60
10
0
10
0
10
14
12
max.
5
7
7
-60
16 EDO-DRAM
–
–
10k
10k
–
–
–
–
45
30
Unit Test
mA
mA
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Condition
1
2, 4
1998-10-01
Unit
pF
pF
pF