HYB514800BJ-60 SIEMENS [Siemens Semiconductor Group], HYB514800BJ-60 Datasheet - Page 4

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HYB514800BJ-60

Manufacturer Part Number
HYB514800BJ-60
Description
512kx8-Bit Dynamic RAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 ˚C
Storage temperature range......................................................................................– 55 to + 150 ˚C
Soldering temperature ............................................................................................................260 ˚C
Soldering time .............................................................................................................................10 s
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power Supply voltage ..................................................................................................... – 1 to + 7 V
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
DC Characteristics
T
Parameter
Input high voltage
Input low voltage
Output high voltage (
Output low voltage (
Input leakage current, any input
(0 V <
Output leakage current
(DO is disabled, 0 <
Average
Standby
(RAS = CAS =
Average
refresh cycles
Average
mode operation
Semiconductor Group
A
= 0 to 70 ˚C,
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
V
in
V
V
V
V
CC
< 7, all other input = 0 V)
CC
CC
CC
supply current
supply current
supply current during RAS-only
supply current during fast page
V
V
ih
SS
)
= 0 V,
I
V
OUT
I
OUT
OUT
-60 version
-70 version
-80 version
-60 version
-70 version
-80 version
-60 version
-70 version
-80 version
= 4.2 mA)
= – 5 mA)
<
V
V
CC
CC
= 5 V
)
10 %,
t
T
= 5 ns
128
Symbol
V
V
V
V
I
I
I
I
I
I
I(L)
o(L)
CC1
CC2
CC3
CC4
ih
il
oh
ol
min.
2.4
– 1.0
2.4
– 10
– 10
Limit Values
HYB 514800BJ -60/-70/-80
max.
6.5
0.8
0.4
10
10
110
100
90
2
110
100
90
70
60
50
512k x 8 DRAM
Unit Test
V
V
V
V
mA
mA
mA
mA
A
A
Condition
1)
1)
1)
1)
1)
1)
2) 3)
2)
2) 3)

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