EDD2516AKTA-6BLI ELPIDA [Elpida Memory], EDD2516AKTA-6BLI Datasheet - Page 19

• Manufacturer Part Number: EDD2516AKTA-6BLI
• Description: 256M bits DDR SDRAM WTR (Wide Temperature Range)
• Manufacturer: ELPIDA [Elpida Memory]

EDD2516AKTA-TI, EDD2516AKTA-LI
Auto-refresh command [REF]
This command executes auto-refresh. The banks and the ROW addresses to be refreshed are internally determined
by the internal refresh controller. The average refresh cycle is 7.8 μs. The output buffer becomes High-Z after auto-
refresh start. Precharge has been completed automatically after the auto-refresh. The ACT or MRS command can
be issued tRFC after the last auto-refresh command.
Self-refresh entry [SELF]
This command starts self-refresh. The self-refresh operation continues as long as CKE is held Low. During the self-
refresh operation, all ROW addresses are repeated refreshing by the internal refresh controller. A self-refresh is
terminated by a self-refresh exit command.
Power down mode entry [PDEN]
tPDEN (= 1 cycle) after the cycle when [PDEN] is issued. The DDR SDRAM enters into power-down mode. In
power down mode, power consumption is suppressed by deactivating the input initial circuit. Power down mode
continues while CKE is held Low. No internal refresh operation occurs during the power down mode. [PDEN] do not
disable DLL.
Self-refresh exit [SELFX]
This command is executed to exit from self-refresh mode. To issue non-read commands, tSNR has to be satisfied.
((tSNR =)12 cycles for tCK = 6.0ns after [SELFX]) To issue read command, tSRD has to be satisfied to adjust
DOUT timing by DLL. (200 cycles after [SELFX]) After the exit, input auto-refresh command within 7.8 μs.
Power down exit [PDEX]
The DDR SDRAM can exit from power down mode tPDEX (1 cycle min.) after the cycle when [PDEX] is issued.
Preliminary Data Sheet E0435E20 (Ver. 2.0)
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