EDD2516KCTA-6BSI-E ELPIDA [Elpida Memory], EDD2516KCTA-6BSI-E Datasheet - Page 10

• Manufacturer Part Number: EDD2516KCTA-6BSI-E
• Description: 256M bits DDR SDRAM 256M bits DDR SDRAM
• Manufacturer: ELPIDA [Elpida Memory]

Timing Parameter Measured in Clock Cycle
tCK
Parameter
Write to pre-charge command delay (same bank) tWPD
Read to pre-charge command delay (same bank) tRPD
Write to read command delay (to input all data)
Burst stop command to write command delay
(CL = 2)
(CL = 2.5)
Burst stop command to DQ High-Z
(CL = 2)
(CL = 2.5)
Read command to write command delay
(to output all data)
(CL = 2)
(CL = 2.5)
Pre-charge command to High-Z
(CL = 2)
(CL = 2.5)
Write command to data in latency
Write recovery
DM to data in latency
Mode register set command cycle time
Power down entry
Power down exit to command input
Preliminary Data Sheet E0555E40 (Ver.4.0)
Symbol
tWRD
tBSTW
tBSTW
tBSTZ
tBSTZ
tRWD
tRWD
tHZP
tHZP
tWCD
tWR
tDMD
tMRD
tPDEN
tPDEX
10
Number of clock cycle
6ns
min.
4 + BL/2
BL/2
2 + BL/2
—
3
—
2.5
—
3 + BL/2
—
2.5
1
3
0
2
1
1
max.
—
—
—
—
—
—
2.5
—
—
—
2.5
1
—
0
—
1
—
7.5ns
min.
3 + BL/2
BL/2
2 + BL/2
2
3
2
2.5
2 + BL/2
3 + BL/2
2
2.5
1
2
0
2
1
1
EDD2516KCTA-SI
max.
—
—
—
—
—
2
2.5
—
—
2
2.5
1
—
0
—
1
—
Unit
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK