IRFZ44R_11 VISHAY [Vishay Siliconix], IRFZ44R_11 Datasheet - Page 7

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IRFZ44R_11

Manufacturer Part Number
IRFZ44R_11
Description
Power MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91292.
Document Number: 91292
S11-0517-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Re-applied
voltage
Rever e
recovery
current
+
R
-
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
This datasheet is subject to change without notice.
= 5 V for logic level device
P.W.
D
D
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Fig. 14 - For N-Channel
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
• dV/dt controlled by R
• Driver ame type a D.U.T.
• I
• D.U.T. - device under te t
Diode recovery
current
D
controlled by duty factor “D”
Circuit layout con ideration
dV/dt
• Low tray inductance
• Low leakage inductance
current tran former
dI/dt
round plane
D =
-
g
Period
P.W.
+
IRFZ44R, SiHFZ44R
V
I
V
DD
D
= 10 V
+
-
V
DD
a
www.vishay.com/doc?91000
Vishay Siliconix
www.vishay.com
7

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