BSC340N08NS3G INFINEON [Infineon Technologies AG], BSC340N08NS3G Datasheet

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BSC340N08NS3G

Manufacturer Part Number
BSC340N08NS3G
Description
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet

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Part Number:
BSC340N08NS3GATMA1
0
Rev. 2.6
1)
2)
connection. PCB is vertical in still air.
3)
4)
Features
• Ideal for high frequency switching
• Optimized technology for DC/DC converters
• Excellent gate charge x R
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
OptiMOS™3 Power-Transistor
Type
Package
Marking
See figure 13 for more detailed information
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
See figure 3 for more detailed information
BSC340N08NS3 G
PG-TDSON-8
340N08NS
3)
j
=25 °C, unless otherwise specified
DS(on)
1)
4)
product (FOM)
for target applications
Symbol Conditions
I
I
E
V
D
D,pulse
AS
GS
V
V
V
R
T
I
D
page 1
C
GS
GS
GS
thJA
=12 A, R
=25 °C
=10 V, T
=10 V, T
=10 V, T
=50 K/W
GS
C
C
A
=25 Ω
Product Summary
V
R
I
2)
=25 °C,
=25 °C
=100 °C
D
DS
DS(on),max
Value
±20
23
15
92
20
7
BSC340N08NS3 G
80
34
23
Unit
A
mJ
V
V
mΩ
A
2009-11-04

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BSC340N08NS3G Summary of contents

Page 1

OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) • Superior thermal resistance • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • ...

Page 2

Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case Device on PCB Electrical characteristics Static characteristics ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

Page 4

Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter limited by ...

Page 5

Typ. output characteristics I =f =25 ° parameter 100 Typ. transfer characteristics I =f |>2 ...

Page 6

Drain-source on-state resistance =10 V DS(on max -60 - Typ. capacitances C =f ...

Page 7

Avalanche characteristics =25 Ω parameter: T j(start) 100 10 125 ° Drain-source breakdown voltage V =f BR(DSS 100 ...

Page 8

PG-TDSON-8 Rev. 2.6 page 8 BSC340N08NS3 G 2009-11-04 ...

Page 9

Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...

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