T1G6003028-FS TRIQUINT [TriQuint Semiconductor], T1G6003028-FS Datasheet
T1G6003028-FS
Related parts for T1G6003028-FS
T1G6003028-FS Summary of contents
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... Operating Voltage • Low thermal resistance package • General Description The TriQuint T1G6003028- discrete GaN on SiC HEMT which operates from GHz. The device is constructed with TriQuint’s proven 0.25 µm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions ...
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... T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Specifications Absolute Maximum Ratings Parameter Drain to Gate Voltage, Vd – Vg Drain Voltage, Vd Gate Voltage, Vg Drain Current, Id Gate Current, Ig Power Dissipation, Pdiss RF Input Power, CW 25ºC Channel Temperature, Tch Mounting Temperature (30 sec) Storage Temperature Operation of this device outside the parameter ranges given above may cause permanent damage ...
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... T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Specifications (cont.) Thermal and Reliability Information Test Conditions °C Note: Thermal resistance, , measured to bottom of package JC Data Sheet: Rev B 09/12/2012 © 2012 TriQuint Semiconductor, Inc. (° C) (° C/W) JC 205 4 Connecting the Digital World to the Global Network Disclaimer: Subject to change without notice ® ...
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... T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Load Pull Smith Chart RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency ...
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... Gain DEff. PAE T1G6003028-FS Gain DEff. and PAE vs. Pout = 200mA 4000MHz, 100µs 20 6.37 - j13.01 Ω 4.99 - j4.31 Ω Gain DEff ...
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... Performance over Temperature: Gain, Efficiency and Output Power Performance measured in TriQuint’s 5.4 GHz to 5.9 GHz Evaluation Board compression. T1G6003028-FS Gain vs. Temp 200 mA; Pulse: 100 µs, 20 T1G6003028-FS Drain Eff. vs. Temp 200 mA; Pulse: 100 µs, 20 Data Sheet: Rev B 09/12/2012 © 2012 TriQuint Semiconductor, Inc. ...
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... T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Evaluation Board Performance: 5.4 to 5.9 GHz V 50.00 45.00 40.00 35.00 30.00 25.00 20.00 15.00 10.00 5.00 5.40 Drain Efficiency and Power Added Efficiency Compression 5.40 Data Sheet: Rev B 09/12/2012 © 2012 TriQuint Semiconductor, Inc. Output Power and Gain Compression = 200 mA; Pulse: 100 µsec, 20% ...
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... T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Application Circuit Bias-up Procedure Vg set to -5.0V Vd set Adjust Vg more positive until quiescent Id is 200 mA. This will -3.6 V typical Apply RF signal Data Sheet: Rev B 09/12/2012 © 2012 TriQuint Semiconductor, Inc. Bias-down Procedure Turn off RF signal ...
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... T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications Information Evaluation Board Layout Top RF layer is 0.020” thick Rogers RO4350B, The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. ...
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... Flange The T1G6003028-FS will be marked with the “3028” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the “ZZZ” auto-generated number. ...
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... T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Mechanical Information Package Information and Dimensions All dimensions are in millimeters. This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu compatible with both lead-free (maximum 260 ° C reflow temperature) and tin-lead (maximum 245 °C reflow temperature) soldering processes ...
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... T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor 6 GHz, GaN RF Power Transistor Product Compliance Information Product Compliance Information ESD Information ESD Rating: Class 1A Value: ≥ 250 V Test: Human Body Model (HBM) Human Body Model (HBM) Standard: JEDEC Standard JESD22 Standard JESD22-A114 MSL Rating Level 3 at +260 ° ...
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... T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@tqs.com For technical questions and application information: Email: info-products@tqs.com Important Notice The information contained herein is believed to be reliable. ...