HAT2217C-EL-E RENESAS [Renesas Technology Corp], HAT2217C-EL-E Datasheet
HAT2217C-EL-E
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HAT2217C-EL-E Summary of contents
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... HAT2217C Silicon N Channel MOS FET Power Switching Features Low on-resistance R = 105 m typ. ( 4.5 V) DS(on) GS Low drive current. High density mounting 4.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 5 6 Absolute Maximum Ratings Item Drain to Source voltage ...
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... HAT2217C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge ...
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... HAT2217C Main Characteristics Power vs. Temperature Derating 1.6 1.2 0.8 0 Ambient Temperature Typical Output Characteristics Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 800 600 400 200 Gate to Source Voltage Rev.3.00 May 19, 2005 page ...
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... HAT2217C Static Drain to Source On State Resistance vs. Temperature 500 400 300 200 V = 10V GS 100 4.5V 0 − Case Temperature Dynamic Input Characteristics Gate Charge Reverse Drain Current vs. Source to Drain Voltage ...
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... HAT2217C Switching Time Test Circuit Vin Monitor D.U.T. 4.7 Ω Vin 10 V Rev.3.00 May 19, 2005 page Switching Time Waveform Vout Monitor R L 10% Vin V DS Vout 10 td(on) 90% 10% 90% 90% td(off ...
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... A-A Section Ordering Information Part Name HAT2217C-EL-E Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 May 19, 2005 page Package Name MASS[Typ.] CMFPAK-6 / CMFPAK-6V 0.0065g c ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...