HAT2217C-EL-E RENESAS [Renesas Technology Corp], HAT2217C-EL-E Datasheet - Page 2

• Manufacturer Part Number: HAT2217C-EL-E
• Description: Silicon N Channel MOS FET Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2217C
Electrical Characteristics
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leakage current
Drain to Source leakage current
Gate to Source cutoff voltage
Drain to Source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to Source charge
Gate to Drain charge
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Body - Drain diode forward voltage
Notes: 3. Pulse test
Rev.3.00 May 19, 2005 page 2 of 6
Item
Symbol
V
R
V
V
(BR)GSS
Coss
DS(on)
(BR)DSS
| y
Crss
Ciss
Qgd
Qgs
t
t
I
I
V
GS(th)
Qg
d(on)
d(off)
GSS
DSS
t
t
DF
fs
r
f
|
Min.
+20
–10
2.8
60
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Typ.
0.85
105
126
275
4.3
4.5
0.8
0.7
—
40
16
11
35
—
—
—
—
5
3
Max.
1.25
132
183
—
—
—
—
—
—
—
—
—
—
—
—
—
10
1
2
Unit
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
V
A
A
I
I
V
V
I
I
I
I
V
f = 1 MHz
V
V
V
I
V
I
V
R
I
D
G
D
D
D
D
D
D
F
GS
DS
GS
DS
GS
DS
GS
DD
L
= 3 A, V
= 10 mA, V
= 100 A, V
= 1 mA, V
= 1.5 A, V
= 1.5 A, V
= 1.5 A, V
= 3 A
= 1.5 A
= 6.6
= 60 V, V
= 10 V
= 10 V
= 10 V
= 16 / –8 V, V
= 0
= 10 V
= 10 V
Test Conditions
GS
, R
DS
GS
GS
GS
= 0
GS
GS
g
= 10 V
= 10 V
= 4.5 V
= 10 V
DS
= 4.7
= 0
= 0
(Ta = 25°C)
DS
= 0
= 0
Note3
Note3
Note3
Note3