HAT2217C-EL-E RENESAS [Renesas Technology Corp], HAT2217C-EL-E Datasheet - Page 4

• Manufacturer Part Number: HAT2217C-EL-E
• Description: Silicon N Channel MOS FET Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2217C
Rev.3.00 May 19, 2005 page 4 of 6
500
400
300
200
100
80
60
40
20
10
2
Static Drain to Source On State Resistance
0
4
0
8
6
0
−25
I
D
Source to Drain Voltage
V
V
Dynamic Input Characteristics
= 3 A
DD
0
DD
10 V
V
Case Temperature
0.4
Reverse Drain Current vs.
Gate Charge
2
GS
4.5V
Source to Drain Voltage
= 10 V
25 V
50 V
25
= 10V
vs. Temperature
0.8
4
50
V
V
GS
DD
75
V
1.2
0.5,1.5 A
3 A
6
Qg (nC)
GS
= 50 V
I
D
25 V
10 V
100 125 150
= 0 , -10 V
= 0.5,1.5 A
Tc (°C)
Pulse Test
Pulse Test
V
1.6
8
SD
3 A
(V)
2.0
10
16
12
8
4
0
10000
1000
3000
1000
100
100
300
100
0.3
0.1
10
30
10
30
10
0.1
0.01 0.03
1
3
1
3
1
0
Drain to Source Voltage
Forward Transfer Admittance vs.
0.3
10
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
Drain Current
Drain Current
Tc = −25°C
t d(off)
0.1
20
1
Drain Current
0.3
30
75°C
3
40
10
I
I
1
D
D
V
Pulse Test
DS
V
f = 1 MHz
Ciss
(A)
(A)
Crss
Coss
V
GS
= 10 V
DS
t d(on)
25°C
30
50
3
= 0
t f
t r
(V)
100
10
60