HAT2217C-EL-E RENESAS [Renesas Technology Corp], HAT2217C-EL-E Datasheet - Page 3

• Manufacturer Part Number: HAT2217C-EL-E
• Description: Silicon N Channel MOS FET Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2217C
Main Characteristics
Rev.3.00 May 19, 2005 page 3 of 6
600
400
200
800
1.6
1.2
0.8
0.4
10
8
6
4
2
0
0
0
Drain to Source Saturation Voltage vs.
Power vs. Temperature Derating
Drain to Source Voltage
Gate to Source Voltage
Typical Output Characteristics
Ambient Temperature
2
4
Gate to Source Voltage
50
4 V
5 V
8
4
10 V
100
12
6
V
Pulse Test
Pulse Test
150
GS
I
Ta (°C)
D
V
V
16
= 3 A
8
= 2 V
GS
DS
1.5 A
0.5 A
3.5 V
2.5 V
3 V
(V)
(V)
200
20
10
1000
0.03
100
100
0.01
0.3
0.1
30
10
10
10
3
1
8
6
4
2
0
Static Drain to Source on State Resistance
0.1
V
Pulse Test
0.03
DS
Drain to Source Voltage
Gate to Source Voltage
Maximum Safe Operation Area
Typical Transfer Characteristics
Operation in this
area is limited by
R
= 10 V
DS(on)
1
0.1 0.3
Drain Current
vs. Drain Current
1
2
Ta = 25°C,1shot pulse
When using the FR4 board.
−25°C
1
3
V
3
10
GS
Tc = 75 °C
-4.5V
I
Pulse Test
D
10 30 100
= 10 V
V
V
(A)
4
GS
DS
25°C
(V)
(V)
100
5