AO8801L AOSMD [Alpha & Omega Semiconductors], AO8801L Datasheet
AO8801L
Manufacturer Part Number
AO8801L
Description
Dual P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
AOSMD [Alpha & Omega Semiconductors]
Datasheet
1.AO8801L.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AO8801L
Manufacturer:
DIODES
Quantity:
1 898
Part Number:
AO8801L
Manufacturer:
AOS/万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO8801 uses advanced trench technology to
provide excellent R
with gate voltages as low as 1.8V. This device is
suitable for use as a load switch or in PWM applications.
It is ESD protected. Standard Product AO8801 is Pb-
free (meets ROHS & Sony 259 specifications).
AO8801L is a Green Product ordering option. AO8801
and AO8801L are electrically identical.
AO8801
Dual P-Channel Enhancement Mode Field Effect Transistor
A
D1
S1
S1
G1
1
2
3
4
Top View
TSSOP-8
A
DS(ON)
B
T
T
T
T
A
A
A
A
8
7
6
5
=25°C
=70°C
=25°C
=70°C
, low gate charge and operation
C
D2
S2
S2
G2
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
R
R
θJA
θJL
Features
V
I
R
R
R
ESD Rating: 3000V HBM
D
DS
DS(ON)
DS(ON)
DS(ON)
= -4.7 A (V
(V) = -20V
G1
Maximum
-55 to 150
< 42mΩ (V
< 53mΩ (V
< 70mΩ (V
-4.7
-3.7
Typ
-20
-30
1.4
0.9
±8
73
96
63
GS
D
S1
= -4.5V)
GS
GS
GS
Max
125
= -4.5V)
= -2.5V)
= -1.8V)
90
75
G2
D2
S2
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A
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AO8801L Summary of contents
Page 1
... This device is suitable for use as a load switch or in PWM applications ESD protected. Standard Product AO8801 is Pb- free (meets ROHS & Sony 259 specifications). AO8801L is a Green Product ordering option. AO8801 and AO8801L are electrically identical. TSSOP-8 Top View ...
Page 2
AO8801 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current ...
Page 3
AO8801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -4.5V -8V -3. -2. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. ...
Page 4
AO8801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-10V =-4. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° DS(ON) 10.0 limited 1.0 ...